- Tytuł:
- Photoelectron Spectroscopy of II-VI Semiconductor Heterostructures
- Autorzy:
-
Wörz, M.
Hampel, M.
Flierl, R.
Gebhardt, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1952740.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 79.60.Jv
- Opis:
- We are growing ZnSe, ZnS and CdSe layers epitaxially on GaAs(001) substrates by atomic layer epitaxy and molecular beam epitaxy. The substrates are prepared by a H-plasma method in order to obtain a sharp interface between substrate and layer. The quality of our samples is controlled by reflection high energy diffraction and X-ray diffraction. Furthermore, the samples are characterized in situ by photoelectron spectroscopy. We observe resonant Zn 3d$\text{}^{8}$ and Cd 4d$\text{}^{8}$ satellites, which are used to check the layer quality. As a result, the valence band offsets of CdSe/ZnSe and ZnSe/CdSe were obtained. The values are ΔE$\text{}_{v}$(ZnSe/CdSe) = -(0.13 ± 0.07) eV and ΔE$\text{}_{v}$(CdSe/ZnSe) = -(0.13 ± 0.07) eV, which confirm the commutativity rule.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 1113-1117
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł