Autor: Rogalski, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Modeling of HgCdTeLWIR detector for high operation temperature conditions
Autorzy:: Martyniuk, P.
Gawron, W.
Madejczyk, P.
Rogalski, A.
Piotrowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/220771.pdf
Data publikacji:: 2013
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: HgCdTe
IR detector
Auger suppression
HOT detectors
Opis:: The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
Źródło:: Metrology and Measurement Systems; 2013, 20, 2; 159-170
0860-8229
Pojawia się w:: Metrology and Measurement Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
Autorzy:: Madejczyk, P.
Gawron, W.
Piotrowski, A.
Kłos, K.
Rutkowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506804.pdf
Data publikacji:: 2010-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.79.Pw
07.57.Kp
73.21.Cd
78.67.Pt
79.60.Jv
Opis:: One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for $P^{+}$-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, $AsH_3$ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of $AsH_3$ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher $R_0A$ product of HgCdTe photodiodes in temperatures close to 230 K.
Źródło:: Acta Physica Polonica A; 2010, 118, 6; 1199-1204
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Fast Response Hot (111) HGCDTE MWIR Detectors
Autorzy:: Grodecki, K.
Martyniuk, P.
Kopytko, M.
Kowalewski, A.
Stępień, D.
Kębłowski, A.
Piotrowski, A.
Piotrowski, J.
Gawron, W.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/221254.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: HgCdTe
MWIR
photodetector
response time
Opis:: In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N⁺pP⁺ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 10¹² cm Hz^1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
Źródło:: Metrology and Measurement Systems; 2017, 24, 3; 509-514
0860-8229
Pojawia się w:: Metrology and Measurement Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

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