- Tytuł:
- On GaN Crystallization by Ammonothermal Method
- Autorzy:
-
Dwiliński, R.
Baranowski, J. M.
Kamińska, M.
Doradziński, R.
Garczyński, J.
Sierzputowski, L. - Powiązania:
- https://bibliotekanauki.pl/articles/1950744.pdf
- Data publikacji:
- 1996-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 81.10.Dn
- Opis:
- GaN crystals are grown using ammonothermal method at pressures below 5 kbar and temperatures below 550°C. In this method, GaN is synthesised from high purity metallic gallium. The main role in the low temperature GaN crystallization is played by the chemically active and dense ammonia and dissolved mineralizer. Morphology of the obtained crystals as well as solubility experiments prove that gallium nitride is dissolved and crystallised from solution. Physical properties of GaN crystals obtained using ammonothermal method depend on the growth conditions and the type of mineralizer. All GaN samples reveal very intensive photoluminescence, also at room temperature. The spectra of crystals grown with lithium compound mineralizer are shifted towards higher energies in comparison to crystals grown with potassium based mineralizer. At helium temperatures, phosphorescence is also observed.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 4; 763-766
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł