Wszystkie pola: CP - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:: Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:: https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:: 2012-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
75.50.Pp
81.40.Vw
Opis:: Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:: Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:: Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:: Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Defect Structure of High-Temperature-Grown GaMnSb/GaSb
Autorzy:: Romanowski, P.
Bak-Misiuk, J.
Dynowska, E.
Domagala, J.
Sadowski, J.
Wojciechowski, T.
Barcz, A.
Jakiela, R.
Caliebe, W.
Powiązania:: https://bibliotekanauki.pl/articles/1539009.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
68.37.Hk
68.49.Sf
68.55.ag
68.55.Ln
Opis:: GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 341-343
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Deterioration of Mechanical Properties of MBE-Grown, Metastable Semiconductor Layer with Time: the Case of Zinc Blende MnTe
Autorzy:: Adamiak, S.
Dynowska, E.
Dziedzic, A.
Szmuc, K.
Janik, E.
Wiater, M.
Wojtowicz, T.
Szuszkiewicz, W.
Powiązania:: https://bibliotekanauki.pl/articles/1185914.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
62.20.-x
64.60.My
Opis:: Several few μm thick (001)-oriented, metastable MnTe layers with the zinc blende structure grown onto (001)GaAs substrate by MBE during different periods for the last twenty years were investigated by the scanning electron microscopy, atomic force microscopy, X-ray diffraction, and nanoindentation methods. A partial decomposition of the oldest investigated layers was demonstrated. An important decrease of Young's modulus from about 34 GPa to about 17 GPa, resulting from a deterioration of the crystal structure of such layers, was found.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1248-1250
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
Autorzy:: Borysiewicz, M. A.
Pasternak, I.
Dynowska, E.
Jakieła, R.
Kolkovski, V.
Dużyńska, A.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/2048109.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.Cd
61.05.cp
68.37.Hk
68.37.Ps
68.49.Sf
78.55.Et
Opis:: ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 686-688
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Structural and magnetic properties of MBE grown (Fe/Pt) (111) multilayers
Autorzy:: Marynowska, A.
Dynowska, E.
Lewińska, S.
Seki, T.
Takanashi, K.
Kanak, J.
Pietruczik, A.
Aleszkiewicz, P.
Wawro, A.
Ślawska-Waniewska, A.
Baczewski, L.
Powiązania:: https://bibliotekanauki.pl/articles/1058152.pdf
Data publikacji:: 2016-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.05.jh
68.35.bd
68.35.Ct
68.37.Ef
68.37.Ps
68.65.Ac
75.50.Bb
75.70.Ak
Opis:: Series of Al₂O₃(0001)/Pt/(Fe/Pt)ₙ/Pt multilayers with variable number of bilayers n and thicknesses of individual layers were grown using molecular beam epitaxy to investigate influence of buffer layer structure, number of bilayers, and individual layer thickness on their structural and magnetic properties. Both columnar and monocrystalline 10 nm Pt (111) buffer layers were used in the experiment. Structure of Pt buffer layer determined the roughness of Fe/Pt interfaces and consequently magnetic properties of the multilayers. When multilayers were deposited on columnar Pt buffer layer, we observed increase of Fe/Pt interfaces roughness with increasing number of bilayers to values exceeding the nominal Fe/Pt bilayer thickness in the upper part of the sample volume, which resulted in the increment of coercivity in the sample with n=15 determined from hysteresis loops measured for perpendicular orientation of magnetic field. When Fe/Pt multilayers were deposited on monocrystalline Pt buffer layer, Fe/Pt interfaces were smooth regardless the number of bilayers. All samples, despite of the quality of buffer layer, number of bilayers, and individual layer thickness revealed easy magnetisation axis oriented in the sample plane.
Źródło:: Acta Physica Polonica A; 2016, 130, 6; 1363-1370
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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