- Tytuł:
- Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
- Autorzy:
-
Czapkiewicz, M.
Cywiński, G.
Dybko, K.
Siekacz, M.
Wolny, P.
Gierałtowska, S.
Guziewicz, E.
Skierbiszewski, C.
Wróbel, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1403637.pdf
- Data publikacji:
- 2012-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Qv
73.61.Ng
73.23.-b - Opis:
- We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
- Źródło:
-
Acta Physica Polonica A; 2012, 122, 6; 1026-1028
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł