Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Ga" wg kryterium: Temat


Wyświetlanie 1-10 z 10
Tytuł:
Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:
Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Effect of ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions in Presence of Magnetic Field
Autorzy:
Gałązka, R. R.
Nguyen, The Khoi
Khoi, Le Van
Dobrowolski, W.
Witkowska, B.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1933917.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
Photovoltaic effect of the ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions, prepared by vapor-transport epitaxy of ZnTe on Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate was studied. The photovoltaic measurements were carried out over the temperature range from 12 K to 300 K and in the magnetic field up to 6 T. In the magnetic field, maximum of the sensitivity corresponding to the energy of the forbidden gap of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate splits into two components for σ$\text{}^{+}$ and σ¯ circular polarizations of incident light. This phenomenon was ascribed to the exchange interaction of the magnetic moments of Mn$\text{}^{++}$ ions with band electrons. From the value of the splitting energy the exchange integral N$\text{}_{0}$(α-β) was determined to be 1.15 ± 0.2 eV.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetooptical Properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n Junctions
Autorzy:
Khoi, Le Van
Karczewski, G.
Dobrowolski, W.
Kossut, J.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1891332.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
The first experimental evidence of the magnetic quantum oscillation in the photovoltaic effect of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n junctions is reported. The p-n junctions were obtained in Pb$\text{}_{1-x}$MnxSe crystals with manganese content, 0 ≤ x ≤ 0.08 by introducing Cd donors by diffusion. Measurements were per formed between 5-85 K and in the presence of the magnetic field 0-7 T in the Faraday and Voigt configurations of the incident infrared radiation of various photon energies in the vicinity of the energy gap of a Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se. Strong oscillatory behavior of the photovoltage was observed as a function of the magnetic field intensity at a constant wavelength of the incident light. Using the model of Adler of the energy band structure modified by the exchange terms, and after identification of the initial and final states of the transitions, we derive the band parameters of the Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 445-448
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Induced Persistent Photoconductivity in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions
Autorzy:
Van Khoi, Le
Dobrowolski, W.
Zakrzewski, A.
Dobaczewski, L.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952039.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V$\text{}^{m}$. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$ Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions can be caused by the bistable nature of the In dopant in the Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn$\text{}_{x}$Cd$\text{}_{1-x}$Te and Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 883-886
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of $Sn_{1-x}Cr_xTe$ Diluted Magnetic Semiconductors
Autorzy:
Kilanski, L.
Podgórni, A.
Górska, M.
Dobrowolski, W.
Slynko, V.
Slynko, E.
Reszka, A.
Kowalski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1399145.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
75.30.Hx
75.30.Et
75.50.Pp
Opis:
We present the studies of $Sn_{1-x}Cr_xTe$ semimagnetic semiconductors with chemical composition x ranging from 0.004 to 0.012. The structural characterization indicates that even at low average Cr-content x ≤q 0.012, the aggregation into micrometer size clusters appears in our samples. The magnetic properties are affected by the presence of clusters. In all our samples we observe the transition into the ordered state at temperatures between 130 and 140 K. The analysis of both static and dynamic magnetic susceptibility data indicates that the spin-glass-like state is observed in our samples. The addition of Cr to the alloy seems to shift the spin-glass-like transition from 130 K for x = 0.004 to 140 K for x = 0.012.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 881-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spinodal Decomposition of Magnetic Ions in Eu-Codoped $Ge_{1-x}Cr_{x}Te$
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Reszka, A.
Domukhovski, V.
Kowalski, B.
Brodowska, B.
Anderson, J.
Butch, N.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1403631.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
75.40.Cx
75.40.Mg
75.50.Pp
Opis:
We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the $Ge_{1-x-y}Cr_{x}Eu_{y}Te$ samples with chemical composition varying in the range of 0.015 ≤ x ≤ 0.057 and 0.003 ≤ y ≤ 0.042. The ferromagnetic transition at temperatures 50 ≤ T ≤ 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field $H_C$ = 5 - 63 mT and the saturation magnetization $M_S$ ≈ 2 - 6 emu/g are found to strongly depend on the chemical composition of the alloy.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1012-1015
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions
Autorzy:
Kilanski, L.
Szymański, M.
Brodowska, B.
Górska, M.
Szymczak, R.
Podgórni, A.
Avdonin, A.
Reszka, A.
Kowalski, B.
Domukhovski, V.
Arciszewska, M.
Dobrowolski, W.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376790.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
75.30.Hx
75.30.Et
75.50.Pp
Opis:
We present the studies of structural, electrical and magnetic properties of bulk $Sn_{1-x-y}Pb_xCr_yTe$ mixed crystals with chemical composition 0.18 ≤ x ≤ 0.35 and 0.007 ≤ y ≤ 0.071. The magnetometric studies indicate that for the high Cr-content, y=0.071, the alloy shows ferromagnetic alignment with the Curie temperature, $T_{C}$, around 265 K. The $Cr_5Te_8$ clusters are responsible for the ferromagnetic order. At low Cr content, y ≈ 0.01, a peak in the ac magnetic susceptibility identified as the cluster-glass-like transition is observed at a temperature about 130 K. The cluster-glass-like transition is likely due to the presence of $Cr_2Te_3$ clusters in the samples with y ≈ 0.01. The transport characterization of the samples indicated strong metallic p-type conductivity with relatively high carrier concentration, n > $10^{20}$ $cm^{-3}$, and carrier mobility, μ > 150 $cm^2$/(V s).
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1203-1206
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$Zn_{1-x}(Mn,Co)_xGeAs_2$ Ferromagnetic Semiconductor: Magnetic and Transport Properties
Autorzy:
Kilanski, L.
Gorska, M.
Domukhovski, V.
Dobrowolski, W.
Anderson, J.
Rotundu, C.
Varniavskii, S.
Marenkin, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811937.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.50.Pp
75.40.Cx
Opis:
We present the studies of magnetic and transport properties of the bulk $Zn_{1-x}(Mn, Co)_xGeAs_2$ mixed crystals with 0.052 ≤ x ≤0.182 grown using direct fusion method. Magnetic investigations showed that for samples with x ≥ 0.078 we observed a behavior typical of ferromagnets, with the Curie temperatures $T_C$ ≥ 300 K. The observed ferromagnetism was probably connected with the spinodal decomposition of the Mn ions in the alloy. The transport studies including resistivity and Hall effect (at B=1.4 T) were performed. The samples showed p-type conductivity with semiconducting or metallic character, depending on the alloy composition. The Hall carrier concentration, p ≥ $10^{18} cm^{-3}$, was composition dependent.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1151-1157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Domukhovski, V.
Brodowska, B.
Reszka, A.
Kowalski, B.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376191.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
72.80.Ga
75.40.Mg
75.50.Pp
Opis:
The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1180-1183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC Magnetic Susceptibility Studies of $Ge_{1-x-y}Sn_{x}Mn_{y}Te$ Mixed Crystals
Autorzy:
Kilanski, L.
Arciszewska, M.
Domukhovski, V.
Dobrowolski, W.
Slynko, V.
Slynko, I.
Powiązania:
https://bibliotekanauki.pl/articles/1811934.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.40.Gb
75.50.Lk
75.50.Pp
Opis:
We present preliminary studies of magnetic and transport properties of $Ge_{1-x-y}Sn_xMn_yTe$ mixed crystals with 0.091 ≤ x ≤ 0.105 and 0.012 ≤ y ≤ 0.115. Qualitative analysis of our experimental results showed the appearance of a spin-glass phase at T < 50 K. The transport characterization (resistivity and Hall effect measurements) showed that the investigated samples had semimetallic p-type conductivity with relatively large carrier concentrations (p > $10^{21} cm^{-3}$) and low mobilities (μ < 100 $cm^2 V^{-1} s^{-1}$). The dependence of transport properties on the chemical composition of the samples was observed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1145-1150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies