Autor: Kret, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of Graphics Processing Unit for In-Line Electron Holography
Autorzy:: Morawiec, K.
Dłużewski, P.
Kret, S.
Szczepańska, A.
Li, T.
Sloan, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033020.pdf
Data publikacji:: 2017-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Lp
68.37.Og
68.55.Nq
42.30.Rx
61.05.jp
07.05.Pj
42.30.-d
42.30.Wb
Opis:: In the present work, software for exit electron wave reconstruction based on the iterative approach was implemented and a new method for drift-correction of the focal series was proposed.
Źródło:: Acta Physica Polonica A; 2017, 131, 5; 1353-1356
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Lattice Parameter Relaxation during MBE of ZnTe/Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Zn$\text{}_{0.5}$Te Buffer Layers by RHLED and HRTEM
Autorzy:: Kret, S.
Karczewski, G.
Zakrzewski, A.
Dłużewski, P.
Dubon, A.
Wojtowicz, T.
Kossut, J.
Delamarre, C.
Laval, J. Y.
Powiązania:: https://bibliotekanauki.pl/articles/1933838.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.16.Bg
61.14.Hg
68.35.-p
Opis:: The dynamics of the lattice relaxation processes were investigated using a reflection of a high energy electron diffraction analysis system during growth by molecular beam epitaxy of ZnTe/Cd$\text{}_{1-x}$Ζn$\text{}_{x}$Te/Cd$\text{}_{0.5}$Mn$\text{}_{0.5}$Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 795-798
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Growth and Properties of ZnMnTe Nanowires
Autorzy:: Zaleszczyk, W.
Janik, E.
Presz, A.
Szuszkiewicz, W.
Morhange, J. F.
Dłużewski, P.
Kret, S.
Kirmse, H.
Neumann, W.
Dynowska, E.
Domagała, J. Z.
Caliebe, W.
Aleszkiewicz, M.
Pacuski, W.
Golnik, A.
Kossacki, P.
Baczewski, L. T.
Petroutchik, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/2047697.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.Df
68.65.La
78.55.Et
78.67.Bf
81.15.Hi
Opis:: Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 351-356
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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