Temat: Ps - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Autorzy:: Grodzicki, M.
Wasielewski, R.
Surma, S.
Ciszewski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1807513.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.65.Cf
81.15.Gh
72.80.Jc
79.60.Dp
68.37.Ps
Opis:: The surface of 6H-SiC(0001) samples was subjected to etching under $H_{2}$/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-82-S-85
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
Autorzy:: Mazur, P.
Zuber, S.
Grodzicki, M.
Ciszewski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1195467.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:: Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1131-1133
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Sb Layers on p-GaN: UPS, XPS and LEED Study
Autorzy:: Grodzicki, M.
Mazur, P.
Pers, J.
Zuber, S.
Ciszewski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1376064.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:: The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1128-1130
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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