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Wyszukujesz frazę "Choi, J. H." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Development of Carbon Nanotube Based Reflection Type X-ray Source
    Autorzy:
    Choi, H.
    Kim, J.
    Lee, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807922.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    75.47.Gk
    73.50.Fq
    Opis:
    X-ray imaging technology is a useful and leading medical diagnostic tool for health care professionals to diagnose disease in human body. Carbon nanotube based X-ray source, which we have developed in this study, could be also useful and supply integrated diagnostic X-ray imaging tool in diagnosis. Conventionally, thermionic type of tungsten filament X-ray tube is widely employed in the field of biomedical and industrial application fields. However, intrinsic problems, such as poor emission efficiency, low imaging resolution, and high electrical energy consumption etc., may cause the limitation of using the X-ray tube. To fulfill the current market requirement, specifically for medical diagnostic field, we have developed rather a portable and compact carbon nanotube based X-ray device in which microfocus high imaging resolution can be feasible.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1078-1080
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxide Formation In Metal Injection Molding Of 316L Stainless Steel
    Tworzenie tlenków podczas wtryskiwania proszku stali nierdzewnej 316L
    Autorzy:
    Jang, J. M.
    Lee, W.
    Ko, S.-H.
    Han, C.
    Choi, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/351352.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    powder injection molding
    sintering
    316L stainless steel
    sintering atmosphere
    micro parts
    wtryskiwanie proszku
    spiekanie
    stal nierdzewna 316L
    mikro-część
    Opis:
    The effects of sintering condition and powder size on the microstructure of MIMed parts were investigated using water-atomized 316L stainless steel powder. The 316L stainless steel feedstock was injected into micro mold with micro features of various shapes and dimensions. The green parts were debound and pre-sintered at 800°C in hydrogen atmosphere and then sintered at 1300°C and 1350°C in argon atmosphere of 5torr and 760torr, respectively. The oxide particles were formed and distributed homogeneously inside the sample except for the outermost region regardless of sintering condition and powder size. The width of layer without oxide particles are increased with decrease of sintering atmosphere pressure and powder size. The fine oxides act as the obstacle on grain growth and the high sintering temperature causes severe grain growth in micro features due to larger amount of heat gain than that in macro ones.
    Źródło:
    Archives of Metallurgy and Materials; 2015, 60, 2B; 1281-1285
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect Of Grain Size On The Mechanical Properties Of Aluminum
    Wpływ wielkości ziarna na właściwości mechaniczne aluminium
    Autorzy:
    Jeong, G.
    Park, J.
    Nam, S.
    Shin, S.-E.
    Shin, J.
    Bae, D.
    Choi, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/351200.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    nanocrystalline aluminum
    grain size
    microstructure
    mechanical properties
    tensile behavior
    aluminium
    wielkość ziarna
    mikrostruktura
    rozciąganie
    właściwości mechaniczne
    Opis:
    Although many studies have focused on the unique plastic deformation behavior of nanocrystalline aluminum (e.g., the positive deviation from Hall-Petch relation, the unusual yield-drop phenomenon in tensile mode, etc.), the data reported by different research groups are inconsistent with each other, possibly because of different fabrication processes. In this study, aluminum samples with a wide grain-size spectrum – from a few micrometers down to 100 nanometers – are manufactured by powder metallurgy. The grain size was measured by X-ray diffraction analysis and transmission electron microscope observation. Furthermore, the tensile behavior, which varied according to a grain size, is discussed with a comparison of the theoretical models.
    Źródło:
    Archives of Metallurgy and Materials; 2015, 60, 2B; 1287-1291
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
    Autorzy:
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, D.
    Kim, M.
    Kwon, Y.
    Choe, J.
    Kim, J.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535820.pdf
    Data publikacji:
    2010-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.37.Ps
    78.55.Cr
    78.67.Hc
    Opis:
    The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 4; 673-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
    Autorzy:
    Kim, D.
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, M.
    Lee, D.
    Kim, J.
    Eom, G.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537752.pdf
    Data publikacji:
    2010-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    78.55.Cr
    81.05.Ea
    Opis:
    Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 6; 941-944
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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