Autor: Orłowska, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer
Autorzy:: Nossarzewska-Orłowska, E.
Brzozowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1929736.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Hx
81.60.-j
Opis:: The photoluminescence properties of porous layers prepared by anodization of p/p$\text{}^{+}$ silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 713-716
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Monolithic silicon E-DeltaE telescope produced by the Quasi-Selective Epitaxy
Autorzy:: Kordyasz, A.
Nossarzewska-Orłowska, E.
Piasecki, E.
Lipiński, D.
Brzozowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/148588.pdf
Data publikacji:: 2003
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: monolithic E-DeltaE telescope
quasi-selective epitaxy
Opis:: A monolithic, silicon, E-DeltaE telescope with a 20 žm thick DeltaE detector followed by a 300 žm thick E detector based on the n-p+-n structure was produced using a new developed process named Quasi-Selective Epitaxy (QSE). The resistivity profile of the n-p+-n structure and E-DeltaE two-dimensional contour plots obtained after irradiation of the monolithic E-DeltaE telescope by alfa-particles are presented. An energy resolution of about 1 MeV was obtained.
Źródło:: Nukleonika; 2003, 48, 1; 31-34
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Investigation of Lattice Strains in Layered Structures Containing Porous Silicon
Autorzy:: Wierzchowski, W.
Wieteska, K.
Graeff, W.
Brzozowski, A.
Nossarzewska-Orłowska, E.
Powiązania:: https://bibliotekanauki.pl/articles/2035501.pdf
Data publikacji:: 2002-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.-a
Opis:: Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 283-288
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Visible Luminescence from Porous Silicon
Autorzy:: Bała, W.
Firszt, F.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Orłowski, B. A.
Kowalski, B. J.
Guziewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1929748.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
Opis:: This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 761-764
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon
Autorzy:: Bała, W.
Głowacki, G.
Łukasiak, Z.
Drozdowski, M.
Kozielski, M.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1876076.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Hv
78.66.-w
Opis:: Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p$\text{}^{+}$ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 445-448
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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