Autor: Bercha, D. M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electron-Phonon Interaction as a Mechanism of Phase Transition in the $CuInP_{2}S_{6}$ Crystal
Autorzy:: Bercha, D.
Bercha, S.
Glukhov, K.
Sznajder, M.
Powiązania:: https://bibliotekanauki.pl/articles/1376070.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 64.60.Cn
71.15.Mb
71.70.Ej
Opis:: Studies on the phases of $CuInP_{2}S_{6}$ crystal exhibiting phase transitions of the order-disorder type are performed. A possibility for the cooperative Jahn-Teller effect to occur in this crystal is analyzed. For this purpose, the procedure of constructing the potential energy matrix is generalized for the case of crystal and it is illustrated by the construction of the adiabatic potentials for $Γ_{5}$-$Γ_{5}$ vibronic coupling for the proto- and paraelectric phases of $CuInP_{2}S_{6}$. The structure of the obtained potentials is analyzed together with the discussion on the appearance of spontaneous polarization in this crystal.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1143-1145
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Band Structure and Optical Properties οf the Layered $Hg_{3}TeCl_{4}$ Crystal
Autorzy:: Sznajder, M.
Bercha, D.
Potera, P.
Khachapuridze, A.
Panko, V.
Bercha, S.
Powiązania:: https://bibliotekanauki.pl/articles/1791361.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.-e
78.40.-q
78.55.-m
71.20.-b
Opis:: First experimental investigations on absorption and photoluminescence of the novel $Hg_{3}TeCl_{4}$ monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the $Hg_{3}TeCl_{4}$ crystal confirmed that $Hg_{3}TeCl_{4}$ is a wide-band-gap photoconductor ($E_{g}$ = 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 950-951
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Dispersion Law with a Low-Energy Non-Parabolicity for the Charge Carriers in the In_{4}Se_{3} Crystal and Related Effects
Autorzy:: Kharkhalis, L.
Shenderovskii, V.
Sznajder, M.
Bercha, D.
Powiązania:: https://bibliotekanauki.pl/articles/1791362.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.15.Mb
71.20.-b
72.30.+q
Opis:: The influence of parameters of the dispersion law exhibiting a low-energy non-parabolicity for the $In_{4}Se_{3}$ crystal on the plasma-electric effect occurring in the non-equilibrium plasma of this semiconductor was investigated under the circumstances that a longitudinal plasma wave propagates in its non-equilibrium plasma.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 952-953
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Parameters of an Unique Condenson State in the Structure of the rm $In_4$ $Se_3$ Crystal
Autorzy:: Sznajder, M.
Lim, Y.
Glukhov, K.
Kharkhalis, L.
Bercha, D.
Powiązania:: https://bibliotekanauki.pl/articles/1410037.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.15.Mb
71.20.-b
71.20.Nr
71.38.-k
Opis:: Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic $In_4$ $Se_3$ semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1115-1117
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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