- Tytuł:
- Pressure Dependence of Exciton Binding Energy in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N Quantum Wells
- Autorzy:
-
Bardyszewski, W.
Łepkowski, S. P.
Teisseyre, H. - Powiązania:
- https://bibliotekanauki.pl/articles/2048086.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.40.Fy
78.20.Bh
78.30.Fs - Opis:
- We present a theoretical study of excitons in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 663-665
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł