Autor: Żymierska, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Autorzy:: Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D.
Powiązania:: https://bibliotekanauki.pl/articles/2035498.pdf
Data publikacji:: 2002-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba
Opis:: An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 259-264
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods
Autorzy:: Żymierska, D.
Auleytner, J.
Domagała, J.
Kobiela, T.
Duś, R.
Powiązania:: https://bibliotekanauki.pl/articles/2035502.pdf
Data publikacji:: 2002-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.-a
68.37.Ps
61.10.Kw
Opis:: A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films.
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 289-294
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods
Autorzy:: Żymierska, D.
Auleytner, J.
Domagała, J.
Szewczyk, A.
Dmitruk, N.
Powiązania:: https://bibliotekanauki.pl/articles/1964181.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ci
68.35.Bs
61.10.Dp
Opis:: The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 1025-1030
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:: Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:: https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:: 2002-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:: The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:: Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:: Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:: https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:: 1999-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.10.-i
61.72.-y
Opis:: The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:: Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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