- Tytuł:
- Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
- Autorzy:
-
Buyanov, A. V.
Holtz, P. O.
Pozina, G.
Monemar, B.
Thordson, J.
Andersson, T. G. - Powiązania:
- https://bibliotekanauki.pl/articles/1968047.pdf
- Data publikacji:
- 1997-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.60.+g
61.72.Vv
68.55.Ln - Opis:
- We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 4; 727-732
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł