- Tytuł:
- Ultrafast Phenomena in Freestanding LT-GaAs Devices
- Autorzy:
-
Marso, M.
Mikulics, M.
Adam, R.
Wu, S. Wu.
Zheng, X.
Camara, I.
Siebe, F.
Förster, A.
Güsten, R.
Kordoš, P.
Sobolewski, R. - Powiązania:
- https://bibliotekanauki.pl/articles/2041640.pdf
- Data publikacji:
- 2005-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
72.40.+w
78.30.Fs
85.60.-q
85.60.Gz - Opis:
- We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 1; 109-117
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł