Temat: SOI - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Silicon microelectronics: where we have come from and where we are heading
Autorzy:: Łukasiak, L.
Jakubowski, A.
Pióro, Z.
Powiązania:: https://bibliotekanauki.pl/articles/308029.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOSFET
scaling
SiGe
SOI
Opis:: The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 7-14
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: A model of partially-depleted SOI MOSFETs in the subthreshold range
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K.
Powiązania:: https://bibliotekanauki.pl/articles/308425.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
subthreshold range
floating body
transconductance
Opis:: A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Characterization of SOI MOSFETs by means of charge-pumping
Autorzy:: Głuszko, G.
Szostak, S.
Gottlob, H.
Lemme, M.
Łukasiak, L.
Powiązania:: https://bibliotekanauki.pl/articles/308671.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI MOSFET
Opis:: This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 67-72
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Gibki, J.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308410.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance
Opis:: An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 57-60
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Autorzy:: Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308669.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer
Opis:: The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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