- Tytuł:
- Pressure-Driven Reordering of Valence Band States in AlGaN/AlN Quantum Wells
- Autorzy:
-
Łepkowski, S.
Bardyszewski, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1403639.pdf
- Data publikacji:
- 2012-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
78.67.De
62.50.-p - Opis:
- We study theoretically the influence of external hydrostatic pressure on the valence band structure in [0001]-oriented $Al_{x}Ga_{1-x}N$/AlN quantum wells used in deep-ultraviolet light emitting devices. The calculations performed using the multi-band k·p method with excitonic effects show that for $Al_{x}Ga_{1-x}N$/AlN quantum wells with x = 0.7 and quantum well width of 1.5 nm, reordering of the topmost valence subbands having different symmetries occurs with increasing pressure. In these structures, at low pressure values the topmost valence level is of $\Gamma p_9$ symmetry whereas it changes to the $\Gamma p_7$ state for pressures about 2.5 GPa. We also find that the excitonic effects increase the critical value of pressure at which the change in the polarization of the emitted light occurs to 7 GPa. This behavior is opposite to the pressure-dependent reordering of the topmost valence band states in thin GaN/AlGaN quantum wells which occurs from $\Gamma p_7$ to $\Gamma p_9$ states.
- Źródło:
-
Acta Physica Polonica A; 2012, 122, 6; 1029-1030
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł