Temat: double-gate MOSFET - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits
Autorzy:: Smaani, Billel
Meraihi, Yacin
Nafa, Fares
Benlatreche, Mohamed Salah
Akroum, Hamza
Latreche, Saida
Powiązania:: https://bibliotekanauki.pl/articles/2055208.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: double-gate MOSFET
compact model
ultra low power analog circuits
Opis:: This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.
Źródło:: International Journal of Electronics and Telecommunications; 2021, 67, 4; 609--614
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation
Autorzy:: Hosenfeld, F.
Horst, F..
Graef, M.
Farokhnejad, A.
Kloes, A.
Iniguez, B.
Lime, F.
Powiązania:: https://bibliotekanauki.pl/articles/397995.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: ultra-short Double-Gate MOSFET
nonequilibrium Green's function
NEGF
ballistic transport
source-to-drain tunneling
ultra-thin body
UTB
compact model
multi-scale simulation
nierównowagowe funkcje Greena
transport balistyczny
tunelowanie źródło-dren
model kompaktowy
symulacja wieloskalowa
Opis:: Shrinking gate length in conventional MOSFETs leads to increasing short channel effects like source-to-drain (SD) tunneling. Compact modeling designers are challenged to model these quantum mechanical effects. The complexity lies in the set-up between time efficiency, physical model relation and analytical equations. Multi-scale simulation bridges the gap between compact models, its fast and efficient calculation of the device terminal voltages, and numerical device models which consider the effects of nanoscale devices. These numerical models iterate between Poisson- and Schroedinger equation which significantly slows down the simulation performance. The physicsbased consideration of quantum effects like the SD tunneling makes the non-equilibrium Green’s function (NEGF) to a stateof-the-art method for the simulation of devices in the sub 10 nm region. This work introduces a semi-analytical NEGF model for ultra-short DG MOSFETs. Applying the closed-form potential solution of a classical compact model, the model turns the NEGF from an iterative numerical solution into a straightforward calculation. The applied mathematical approximations speed up the calculation time of the 1D NEGF. The model results for the ballistic channel current in DG-MOSFETs are compared with numerical NanoMOS TCAD [1] simulation data. Shown is the accurate potential calculation as well as the good agreement of the current characteristic for temperatures down to 75 K for channel lengths from 6 nm to 20 nm and channel thickness from 1.5 nm to 3 nm.
Źródło:: International Journal of Microelectronics and Computer Science; 2016, 7, 2; 65-72
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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