Autor: Gorecki, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Thermal Phenomena on dc Characteristics of the IGBT
Autorzy:: Górecki, P.
Górecki, K.
Powiązania:: https://bibliotekanauki.pl/articles/227059.pdf
Data publikacji:: 2018
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: IGBT
thermal phenomena
measurements
DC characteristics
sub-threshold region
Opis:: The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The used measurement set-ups and the results of measurements of dc characteristics of the selected transistor obtained under different cooling conditions are presented. The influence of the ambient temperature and the applied cooling system on the shape of these characteristics is discussed. In particular, attention has been paid to the untypical shape of non-isothermal characteristics of this element in the subthreshold range.
Źródło:: International Journal of Electronics and Telecommunications; 2018, 64, 1; 71-76
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Modelling the inﬂuence of self-heating on characteristics of IGBTs in the sub-threshold region
Autorzy:: Górecki, K.
Górecki, P.
Powiązania:: https://bibliotekanauki.pl/articles/397748.pdf
Data publikacji:: 2014
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: IGBT
electrothermal model
self-heating
SPICE
model elektrotermiczny
samonagrzewanie
Opis:: The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is veriﬁed experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation. The shape of the obtained characteristics is discussed and the inﬂuence of the sub-threshold effect in the input MOS structure on these characteristics is analysed.
Źródło:: International Journal of Microelectronics and Computer Science; 2014, 5, 4; 149-154
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Autorzy:: Górecki, K.
Górecki, P.
Powiązania:: https://bibliotekanauki.pl/articles/220969.pdf
Data publikacji:: 2015
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: IGBT
thermal resistance
measurements
transistor
semiconductor devices
Opis:: In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
Źródło:: Metrology and Measurement Systems; 2015, 22, 3; 455-464
0860-8229
Pojawia się w:: Metrology and Measurement Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

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