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Wyszukujesz frazę "Rogalski, P." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
Autorzy:
Martyniuk, P.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/201922.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
barrier detectors
unipolar barrier
nBn
HgCdTe
photodetectors
Opis:
The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of HgCdTeLWIR detector for high operation temperature conditions
Autorzy:
Martyniuk, P.
Gawron, W.
Madejczyk, P.
Rogalski, A.
Piotrowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/220771.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
HgCdTe
IR detector
Auger suppression
HOT detectors
Opis:
The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
Źródło:
Metrology and Measurement Systems; 2013, 20, 2; 159-170
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Response Hot (111) HGCDTE MWIR Detectors
Autorzy:
Grodecki, K.
Martyniuk, P.
Kopytko, M.
Kowalewski, A.
Stępień, D.
Kębłowski, A.
Piotrowski, A.
Piotrowski, J.
Gawron, W.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/221254.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
HgCdTe
MWIR
photodetector
response time
Opis:
In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N+pP+ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 1012 cm Hz1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
Źródło:
Metrology and Measurement Systems; 2017, 24, 3; 509-514
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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