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Wyświetlanie 1-4 z 4
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Krzysztof
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818197.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Kkrzysztor
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818200.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Autorzy:
Manyk, Tetiana
Rutkowski, Jarosław
Madejczyk, Paweł
Gawron, Waldemar
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2074201.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
HgCdTe
MWIR detectors
dark current
I-V characteristics
recombination
Opis:
A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141596
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MCT heterostructures for higher operating temperature infrared detectors designed in Poland
Autorzy:
Madejczyk, Paweł
Gawron, Waldemar
Sobieski, Jan
Martyniuk, Piotr
Rutkowski, Jarosław
Powiązania:
https://bibliotekanauki.pl/articles/2204223.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
MCT
HgCdTe
metal organic chemical vapour deposition
infrared detectors
higher operating temperature
Opis:
This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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