- Tytuł:
- The role of quantum-well states and carrier scattering times in discontinuities of opto-electrical characteristics of SCH lasers
- Autorzy:
-
Kozioł, Z
Matukhin, S I
Buduleva, E A - Powiązania:
- https://bibliotekanauki.pl/articles/175012.pdf
- Data publikacji:
- 2014
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
SCH laser
quantum well
heterostructure
carrier scattering time
AlGaAs
discontinuous
I-V characteristics - Opis:
- Drift-diffusion computer simulation model available in Synopsys’ Sentaurus TCAD User Guide is used to study electrical and optical characteristics of a separate-confinement heterostructure laser based on AlGaAs. We investigate the role of the width and depth of quantum-well active region, below and above the lasing threshold. The device properties depend on both, the number of bound quantum-well states and on closeness of the highest bound states to conduction or valence band offset. The lasing action may not exist at certain widths or depths of quantum-well, and the threshold current is a discontinuous function of these parameters, at such values of quantum-well width or depth when the highest quantum-well bound states cross conduction or valence band energy offset. The effects are more pronounced at low temperatures. Discontinuities in characteristics are found, at certain conditions, in temperature dependences as well. The carriers scattering time on quantum-well is shown to have a crucial role for the amplitude of discontinuities of these characteristics. The current below the lasing threshold and the threshold current density itself decrease with an increase of quantum-well scattering times and the amplitude of discontinuities decreases then as well.
- Źródło:
-
Optica Applicata; 2014, 44, 1; 135-146
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł