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Wyszukujesz frazę "Porous silicon" wg kryterium: Temat

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    Wyświetlanie 1-4 z 4
    Tytuł:
    An Effect Etching Time on Structure Properties of Nano-Crystalline p-type Silicon
    Autorzy:
    Hadi, H. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/412165.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Porous Silicon
    Electrochemical Etching
    ECE
    XRD
    AFM
    Opis:
    This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 327-333
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution
    Autorzy:
    Hadi, H.A.
    Ismail, R.A.
    Habubi, N.F.
    Powiązania:
    https://bibliotekanauki.pl/articles/412262.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    porous silicon
    photo-electrochemical etching (PECE)
    porosity
    thickness
    XRD
    AFM
    Opis:
    Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer's formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77 %. The thickness of the layer formed during an anodization in constant current was 3.54nm in gravimetric method, while its value was 1.77nm by using the theoretical relation.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 3; 29-36
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
    Autorzy:
    Abd, Ahmad Naji
    Mishjil, Khudheir A.
    Abdulsada, Ali Hamid
    Habubi, N. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177996.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AFM
    FTIR
    TiO2
    X-Ray diffraction
    XRD
    electrochemical etching p-type silicon wafer
    nanocrystalline porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 96; 134-148
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction
    Autorzy:
    Hadi, H. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/411926.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    porous silicon
    electrochemical etching
    spray pyrolysis
    fluoride-doped tin oxide film
    nanostructures
    SEM
    AFM
    photodetector
    Opis:
    In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2 : F for film was deduced. From (I-V) and (C-V) measurements, the barrier ØB height for FTO/PS diode was of 0.77, and the built in voltage Vbi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 17, 2; 142-152
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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