- Tytuł:
- Structure and Electron-Transport Properties of Photoresist Implanted by $Sb^{+}$ Ions
- Autorzy:
-
Vabishchevich, N.
Brinkevich, D.
Volobuev, V.
Lukashevich, M.
Prosolovich, V.
Sidorenko, Yu.
Odzhaev, V.
Partyka, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1503884.pdf
- Data publikacji:
- 2011-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 85.40.Hp
- Opis:
- Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × $10^{15}$ ÷ 5 × $10^{16} cm^{-2}$ with the ion current density 4 μA/$cm^2$ have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 1; 46-48
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł