Structure and Electron-Transport Properties of Photoresist Implanted by $Sb^{+}$ Ions

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × $10^{15}$ ÷ 5 × $10^{16} cm^{-2}$ with the ion current density 4 μA/$cm^2$ have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.