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    Wyświetlanie 1-4 z 4
    Tytuł:
    The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Larkin, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503798.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 35-38
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503812.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 39-42
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
    Autorzy:
    Zhukowski, P.
    Kołtunowicz, T.
    Węgierek, P.
    Fedotova, J.
    Fedotov, A.
    Larkin, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503848.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.22.-f
    81.40.Ef
    84.37.+q
    72.20.Ee
    Opis:
    This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 43-45
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanisms of Carrier Transport in $Cu_x(SiO_2)_{1-x}$ Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions
    Autorzy:
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Saad, A.
    Fedotova, V.
    Czarnacka, K.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402220.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.37.+q
    72.80.Ga
    73.22.-f
    61.46.Df
    64.60.ah
    Opis:
    The present paper investigates the temperature/frequency dependences of admittance Z in the granular $Cu_x(SiO_2)_{1-x}$ nanocomposite films around the percolation threshold $x_{C}$ in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold $x_{C}$ ≈ 0.59 and nearly metallic behaviour beyond the $x_{C}$. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < $x_{C}$ exhibited behavior close to ReZ(f) ≈ $f^{-s}$ with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > $x_{C}$), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 883-886
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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