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    Wyświetlanie 1-15 z 15
    Tytuł:
    Spectroscopy Studies of Erbium and Dysprosium Acetate Single Crystals
    Autorzy:
    Mondry, A.
    Bukietyńska, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945559.pdf
    Data publikacji:
    1996-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Wc
    81.40.Tv
    Opis:
    Electronic absorption spectra of erbium and dysprosium acetate single crystals were measured. The intensities of 4f-4f transitions were calculated and the Judd-Ofelt Ω$\text{}_{λ}$ parameters evaluated. Heavy lanthanide acetates differ from other lanthanide carboxylate compounds by relatively high "hypersensitive" transition intensities and the Ω$\text{}_{2}$ parameters. These results are discussed in terms of a stronger polarization effect which can be explained by the distinctly shorter Ln-OH$\text{}_{2}$ bond in comparison with the Ln-OOC bond in the investigated system.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 1; 233-238
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Structural and Optical Properties of GDC Thin Films Deposited by Reactive Magnetron Sputtering
    Autorzy:
    Sakaliūnienė, J.
    Čyvienė, J.
    Abakevičienė, B.
    Dudonis, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503905.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    81.40.Tv
    Opis:
    The purpose of this paper was to analyze structural and optical properties of gadolinia-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{1.95}$) thin films. At first the ceria-gadolinia multilayer sandwich systems (4-12 layers) were deposited using reactive magnetron sputtering in the $O_2$/Ar gas mixtures. The films were formed with ≈ 90% ceria and ≈ 10% gadolinia. The GDC thin films deposited on Si (111) substrate were annealed at 600°C for 1 h in air. The thickness of the formed GDC multilayer systems was about 600 nm. The GDC thin film microstructure was investigated by X-ray diffraction and scanning electron microscopy. The texture coefficient $T_{c(hkl)}$ of GDC films was evaluated from the X-ray diffraction patterns. The crystallite size of GDC films was estimated from the Scherrer equation. Optical properties of the annealed GDC thin films were examined using a laser ellipsometer. The results show that the number of layers has the influence on GDC thin film formation. As follows from the analysis of structural and optical properties of GDC 12 layer system annealed at 600°C for one hour in air has the highest refractive index n = 2.17.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 63-65
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Optical Properties of CuInSe$\text{}_{2}$ Thin Films
    Autorzy:
    Fouad, S. S.
    Youssef, S. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920947.pdf
    Data publikacji:
    1992-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.65.-s
    81.40.Tv
    Opis:
    The optical constants of vacuum deposited CuInSe$\text{}_{2}$ thin films of different thicknesses (60-135 nm) were determined in the photon energy from 1.03 to 3.1 eV. It was found that both the refractive index n and the absorption index k are independent of the film thickness. The analysis of the experimental points of the refractive index revealed the existence of normal dispersion and fits Sellmeier dispersion formula for single oscillator model. Using the previous model the optical dielectric constant as well as the oscillator energy and dispersion parameter have been calculated. CuInSe$\text{}_{2}$ is found to be a direct gap semiconductor with a gap energy of 1.03 eV. At energies well above the absorption edge, the absorption behaviour can be explained by the existence of a forbidden direct transition with the same direct energy gap and an indirect one with energy gap of 0.85 eV.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 3; 495-501
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of the Analytical Relationship between Refractive Index and Density of $SiO_{2}$ Layers
    Autorzy:
    Rzodkiewicz, W.
    Panas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807506.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.Tv
    61.82.Ms
    Opis:
    The main goal of the work was the elaboration of the analytical functional relationship between refractive index n and density ρ of $SiO_{2}$ layers on silicon substrates. Such ρ (n) relationship will give possibility to determine elastic and non-elastic strains in $SiO_{2}$ layers on silicon substrates. Ellipsometric measurements by using variable angle spectroscopic ellipsometer of J.A. Woollam Company allowed determination of thicknesses and refractive indexes of silica layers. Measured $SiO_{2}$ masses and calculated volumes of the layers gave possibility to define the degree of densification of silicon dioxide layers on silicon substrates. The Hill approximation function curve turned out to be the best fitting. The obtained Hill curve shows saturation for the density of silicon dioxide equal to ca. 4.53 g/$cm^{3}$. This value corresponds to the value nearby the one of the crystalline polytypic silicon dioxide (stishovite). It seems to be physically established that degree of densification tends to the limiting value.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-92-S-94
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Influence of Reactive Gaseous Flow Rate and Composition on the Optical Properties of $TiO_2$ Thin Films Deposited by Dc Magnetron
    Autorzy:
    Stamate, M.
    Lazar, G.
    Nedeff, V.
    Lazar, I.
    Caraman, I.
    Rusu, I.
    Rusu, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808135.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    81.40.Tv
    Opis:
    In the paper there are shown the changes in optical properties of $TiO_2$ thin films prepared by dc magnetron sputtering at different gas flow rates. We found that there is a drastic change in optical properties such as optical transmission, refractive index, extinction coefficient and optical band gap with the gaseous flow rate and composition. We observed an improvement in optical properties of the films that had been deposited at higher gaseous flow rate and at a certain gaseous composition.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 755-757
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Thermally Deposited Bismuth Telluride in the Wavelength Range of 2.5-10 µm
    Autorzy:
    Morsy, A.Y
    Fouad, S.S.
    Hashem, E.
    El-Shazly, A.A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891983.pdf
    Data publikacji:
    1991-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.65.-s
    81.40.Tv
    Opis:
    The optical constants (the refractive index n, the absorption index k and the absorption coefficient α) of Bi$\text{}_{2}$Te$\text{}_{3}$ thin films were determined in the wave-lenght range of 2.5 to 10 µm. The shape of the absorption edge in Bi$\text{}_{2}$Te$\text{}_{3}$ thin films has been determined from transmittance and reflectance measurements. The edge is of the form expected for direct transition corresponding to E$\text{}_{g}$ = 0.21 eV. The optical constants were used to determine the high frequency dielectric constant ε$\text{}_{0}$ = 58, the optical conductivity σ =σ$\text{}_{1}$ + σ$\text{}_{2}$ as well as the volume and surface energy loss functions. All these parameters were used to get some information about the intraband and interband transitions.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 6; 819-825
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures
    Autorzy:
    Hajakbari, F.
    Taheri Afzali, M.
    Hojabri, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033487.pdf
    Data publikacji:
    2017-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.Tv
    81.07.Bc
    81.15.cd
    Opis:
    In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the optical band gap energy decreases from 3.62 to 3.38 eV by increasing the annealing temperature from 400°C to 600°C. The AFM and SEM results show that the annealing temperature effectively influences the surface morphology of the films.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 3; 417-419
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times
    Autorzy:
    Hojabri, A.
    Pourmohammad, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398740.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.Tv
    81.07.Bc
    81.15.cd
    Opis:
    The zirconia (ZrO₂) is one of the transition-metal oxides with most excellent optical properties which thus attracts great attention in optical engineering. A variety of methods were used for deposition of ZrO₂ thin films on different substrates. In the present work, homogenous, transparent nanocrystalline zirconia thin films were grown by thermal oxidation of zirconium (Zr) thin films deposited on quartz substrate using DC magnetron sputtering technique. The objective of this study is to reveal the effect of thermal oxidation time on structural and optical properties of deposited films. The XRD results revealed the formation of single phase ZrO₂ with tetragonal structure in the films at different thermal oxidation times. The optical constant of ZrO₂ thin films was calculated from the UV-visible transmission spectra. It was found that the increase of thermal oxidation time leads to the increase of transmittance and optical band gap energy of the films. The AFM results showed that thermal oxidation time influences the surface morphology of the films.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 647-649
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Lifetime Measurements of Vacancy Defects in Complex Oxides
    Autorzy:
    Varney, C.
    Selim, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196120.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    78.20.-e
    81.40.Tv
    Opis:
    Native defects in complex oxides play a crucial role in determining their optical, electrical, and magnetic properties and it is difficult to identify and characterize them. Positron lifetime spectroscopy is a powerful technique to study vacancy defects; however its application to complex oxides has been limited. In this work we apply positron lifetime spectroscopy to study open volume defects in rare earth doped yttrium aluminum garnet (YAG) complex oxides grown in argon atmosphere. In YAG single crystals, positron lifetime measurements identified isolated aluminum vacancies and complexes of aluminum vacancy and neighbor oxygen vacancies. Thermoluminescence measurements were also performed to elucidate the interaction between trapping defects and luminescence centers. By combining positron lifetime and thermoluminescence, both the defect type and its effect on the optical properties of YAG crystals were revealed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 764-766
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of Transparent Yttria Ceramics by Spark Plasma Sintering
    Autorzy:
    Korkmaz, E.
    Sahin, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032083.pdf
    Data publikacji:
    2017-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Je
    81.20.Ev
    81.40.Tv
    42.70.Hj
    Opis:
    Rapid densification of yttria (Y₂O₃) ceramics without sintering aids via spark plasma sintering at relatively low temperature of 1300°C for 40 minutes at two-step pressure profile, followed by post-annealing at 1050°C for 6 hours in air was attempted. Effect of preload pressure on microstructure, Vickers hardness, fracture toughness and optical in-line transmittance was investigated. Densification during spark plasma sintering did not involve any phase transformation and all phases have shown cubic structure according to X-ray analysis. The highest hardness and fracture toughness value was recorded to be 7.60±0.18 GPa and 1.16±0.07 MPa m^{1/2} with 10 MPa preload and 100 MPa final load. In addition to this, the highest transmittance with a value of 76.7% at a wavelength of 2000 nm was obtained when studied with 10 MPa preload and 100 MPa final load.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 3; 460-462
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure, Optical and Electric Properties of Opal-Bismuth Silicate Nanocomposites
    Autorzy:
    Derhachov, M.
    Moiseienko, V.
    Kutseva, N.
    Abu Sal, B.
    Holze, R.
    Pliaka, S.
    Yevchyk, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030991.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Bc
    81.40.Tv
    81.70.Fy
    78.67.Bf
    Opis:
    Synthetic opals composed of 300 nm silica spheres are impregnated with a Bi₁₂SiO₂₀ melt at 1190 K. Structure and properties of the as-prepared samples are studied by employing the scanning electron microscopy, X-ray diffraction, and optical spectroscopy and direct current conductivity techniques. The nanocomposites are found to be multi-phase systems composed of Bi₁₂SiO₂₀, Bi₄Si₃O₁₂ and SiO₂ crystallites with an average linear size not less than 20 nm. Formation of Bi₄Si₃O₁₂ crystallites becomes possible as a result of changing in the Bi₂O₃-SiO₂ molar ratio due to the melting of silica spheres. The Raman intensity redistribution observed by surface scanning may be caused by both composition inhomogeneity and concentration of the exciting radiation field at composite defects. The "red" shift of photoluminescence band is observed. Activation energy of direct current conductivity is estimated as 1.1 eV.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 847-850
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Automotive Detailing Products by Ellipsometry and Contact Angle Analysis
    Autorzy:
    Placido, F.
    Birney, R.
    Kavanagh, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1795713.pdf
    Data publikacji:
    2009-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.03.Cd
    81.40.Tv
    81.65.Ps
    Opis:
    Within the automotive detailing community, there is much discussion focusing on the application of waxes and sealants to enhance and protect paint, and there are a very large number of commercial products on the market. The general idea behind the application of such products is that a wax or sealant layer or layers can increase gloss and "depth of colour", provide protection against degradation by ultraviolet rays and also make it easier to keep the paint surface clean by shedding and repulsion of rain water. In this paper, the performance of several commercially-available automotive waxes and sealants is examined. In the absence of any available published work, we have used ellipsometry to determine the thicknesses of applied wax and sealant layers and have quantified the water beading effect by measuring the contact angles of water with the wax films.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 4; 712-714
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Molecular Orientation on Photovoltaic Efficiency and Carrier Transport in a New Semiconducting Polymer
    Autorzy:
    Kažukauskas, V.
    Pranaitis, M.
    Sentein, C.
    Rocha, L.
    Raimond, P.
    Duyssens, I.
    Van Severen, I.
    Lutsen, L.
    Cleij, T.
    Vanderzande, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813394.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    81.40.Rs
    81.40.Tv
    73.61.Ph
    Opis:
    New functionalized soluble poly(p-phenylene vinylene) derivative bearing polar molecules was designed and synthesized in order to investigate effects of molecular orientation in polymer photovoltaic devices. The active polar molecule is the 4-(N-butyl-N-2-hydroxyethyl)-1- nitro-benzene group. The grafting of the push-pull molecule with a donor/transmitter/acceptor structure, possessing a large ground state dipole moment, enables the molecular orientation by a dc electric field. An internal electric field stored in such system facilitates exciton dissociation and improves charge transport in single-layer devices. In our systems an increase in the external quantum efficiency by a factor of about 1.5 to 2 is estimated. The associated effects of orientation on the carrier injection and transport properties were evidenced.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1009-1012
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoelectrical Behaviour of DNA:PEDT-PSS Functionalised Films
    Autorzy:
    Kažukauskas, V.
    Pranaitis, M.
    Krupka, O.
    Sahraoui, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505488.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Gr
    81.40.Rs
    81.40.Tv
    87.85.jc
    87.14.gk
    Opis:
    We report investigations of functionalized DNA:PEDT-PSS films. The thermal activation energy of the conductivity near the room temperature was about 0.033 eV. The weak carrier trapping was identified by the thermally stimulated current method, proving the fast recombination of light-generated carriers. A "bistable" photoconductivity below the room temperature was evidenced upon the white light excitation. By cooling the samples down to 145-155 K the photoconduction was small. Below this temperature sudden increase of the photoconductivity was observed. Meanwhile by heating the photosensitivity remained enhanced up to 235-245 K. The slow relaxations of the current after the light excitation took place, the time constant of which reached several hundreds of seconds. Such phenomenon could presumably be attributed to the light-induced changes of the sample material morphology and/or associated variation of carrier transport conditions.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 151-153
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Heat Treatment on the ac Conductivity and Dielectric Properties of Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ Thin Films
    Autorzy:
    Abd El-Wahabb, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044570.pdf
    Data publikacji:
    2005-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.-r
    77.55.+f
    81.40.Rs
    81.40.Tv
    81.40.Ef
    Opis:
    The effect of heat treatment on the ac conductivity and dielectric properties of the melt quenched and thermally evaporated Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ chalcogenide system are reported for the first time. The results of the alternating current conductivity σ$\text{}_{ac}$, the dielectric constantε$\text{}_{1}$, and the dielectric lossε$\text{}_{2}$ of the Ag$\text{}_{33}$Sb$\text{}_{31}$Se$\text{}_{36}$ thin film samples are presented over the temperature range 303-373 K and the frequency range 0.1-100 kHz. The temperature dependence of the ac conductivity σ$\text{}_{ac}$(ω) and the frequency exponent s are discussed with the aim of the correlated barrier hopping model. Values of σ$\text{}_{ac}$(ω),ε$\text{}_{1}$, and ε$\text{}_{2}$ were found to increase with the increase in the annealing temperature due to the reduction of the number of unsaturated defects which decrease the density of localized states in the band structure.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 6; 985-996
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-15 z 15

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