Autor: Guziewicz, E - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition
Autorzy:: Łukasiewicz, M.
Cabaj, A.
Godlewski, M.
Guziewicz, E.
Wittlin, A.
Jaworski, M.
Wołoś, A.
Wilamowski, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1492931.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 911-913
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: (Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
Autorzy:: Łukasiewicz, M.
Witkowski, B.
Wachnicki, Ł.
Kopalko, K.
Gierałtowska, S.
Wittlin, A.
Jaworski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1492571.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:: Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:: https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
Autorzy:: Kowalik, I. A.
Guziewicz, E.
Kopalko, K.
Yatsunenko, S.
Godlewski, M.
Wójcik, A.
Osinniy, V.
Krajewski, T.
Story, T.
Łusakowska, E.
Paszkowicz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2047710.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.66.Hf
81.15.Kk
Opis:: ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 401-406
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy
Autorzy:: Wójcik, A.
Kiecana, M.
Kopalko, K.
Godlewski, M.
Guziewicz, E.
Yatsunenko, S.
Łusakowska, E.
Minikayev, R.
Paszkowicz, W.
Świątek, K.
Wilamowski, Z.
Sawicki, M.
Dietl, T.
Powiązania:: https://bibliotekanauki.pl/articles/2044552.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Jk
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: Magnetic, structural, and optical properties of ZnMnO films grown with atomic layer epitaxy are discussed. Atomic layer epitaxy films were grown at low temperature using organic zinc and manganese precursors. From magnetometry and electron spin resonance investigations we conclude that lowering of a growth temperature significantly limits formation of Mn precipitates and inclusions of different foreign phases of manganese oxides to ZnMnO host.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 915-921
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
Autorzy:: Łukasiewicz, M.
Wójcik-Głodowska, A.
Guziewicz, E.
Jakieła, R.
Krajewski, T.
Łusakowska, E.
Paszkowicz, W.
Minikayev, R.
Kiecana, M.
Sawicki, M.
Godlewski, M.
Wachnicki, Ł.
Szczepanik, A.
Powiązania:: https://bibliotekanauki.pl/articles/1811957.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1235-1240
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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