- Tytuł:
- Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
- Autorzy:
-
Kim, D.
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, M.
Lee, D.
Kim, J.
Eom, G.
Leem, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1537752.pdf
- Data publikacji:
- 2010-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.67.Hc
78.55.Cr
81.05.Ea - Opis:
- Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
- Źródło:
-
Acta Physica Polonica A; 2010, 117, 6; 941-944
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł