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Tytuł:
Raman Characterisation of $Cd_{1-x}Zn_x$ Te Thick Polycrystalline Films Obtained by the Close-Spaced Sublimation
Autorzy:
Znamenshchykov, Y.
Kosyak, V.
Opanasyuk, A.
Dorda, V.
Fochuk, P.
Medvids, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398336.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Ef
81.05.Dz
Opis:
In this work, we studied the Raman spectra of thick polycrystalline $Cd_{1-x}Zn_x$ Te (CZT) films with x ranged from 0.06 to 0.68. Additionally, the surface morphology and structural properties were studied in order to determine the crystalline quality of the samples. The Raman spectra had a two-mode behavior typical for CZT solid solution and showed CdTe- and ZnTe-like longitudinal and transverse optical modes. The relationship between the frequencies of CdTe- and ZnTe-related modes on x was studied. We observed the deviation of the compositional dependence of phonon mode frequencies for polycrystalline CZT films in comparison with a similar dependence for CZT single crystals. Such deviation was caused by the effect of structural defects in polycrystalline films on frequencies of vibrational modes. The values of excitation wavelength, which allow achieving of high signal-to-noise ratio on the Raman spectra of CZT films with different zinc concentration in the result of resonant enhancement of phonon modes intensities, were experimentally determined.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1430-1435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface morphology, structural and optical properties of MgO films obtained by spray pyrolysis technique
Autorzy:
Diachenko, O.
Opanasuyk, A.
Kurbatov, D.
Opanasuyk, N.
Kononov, O.
Nam, D.
Cheong, H.
Powiązania:
https://bibliotekanauki.pl/articles/1157920.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Rs
Opis:
X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy, UV-visible photometry, and photoluminescence measurements were used to investigate the surface morphology and structural and optical properties of MgO films. Magnesium oxide films deposited by the spray pyrolysis technique were studied. The substrate temperature was varied from T_{s} = 643 K to 693 K. Magnesium chloride hexahydrate (MgCl₂·6H₂O), dissolved in deionized water, was used as the precursor solution. It was established that the single phase films crystallize into a cubic structure with very fine crystallite size (about 2 nm). The optical band gaps of the samples were varied from 3.64 eV to 3.70 eV. Also, the films have a high level of transmittance of 90%. Photoluminescence spectra show the emission peaks at approximately 412 nm (3.00 eV) and 524 nm (2.38 eV). The peak with the energy of 3.00 eV is ascribed to holes trapped in magnesium ion vacancies acting as acceptors (F⁺ center). The broad emission peak at 524 nm is related to the presence of defects (F¯ centers) associated with oxygen ion vacancies.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 805-810
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Electrochemical Performance of ZnO Films as Anode Materials for Li-Ion Batteries
Autorzy:
Cevher, O.
Cetinkaya, T.
Tocoglu, U.
Guler, M.
Akbulut, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399886.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
82.47.Aa
Opis:
In this work, the effect of rf power on the structural, electrical and electrochemical properties of ZnO thin films was investigated. ZnO thin films were deposited on glass and Cr coated stainless steel substrates by rf magnetron sputtering in pure Ar gas environment. ZnO thin films for different rf powers (75, 100, and 125 W) were deposited keeping all other deposition parameters fixed. ZnO thin films were used as negative electrode materials for lithium-ion batteries, whose charge-discharge properties, cyclic voltammetry and cycle performance were examined. A high initial discharge capacity about 908 mAh g^{-1} was observed at a 0.5 C rate between 0.05 and 2.5 V. The crystallographic structure of the sample was determined by X-ray diffraction. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thickness of the ZnO thin films was measured using a profilometer.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 355-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects
Autorzy:
Yim, K.
Jeon, S.
Kim, M.
Kim, S.
Nam, G.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1491348.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Lm
78.55.Et
Opis:
ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 214-216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates
Autorzy:
Zytkiewicz, Z.
Dluzewski, P.
Borysiuk, J.
Sobanska, M.
Klosek, K.
Witkowski, B.
Setkiewicz, M.
Pustelny, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492480.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
81.05.Dz
61.46.Km
Opis:
We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-015-A-016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
Autorzy:
Wachnicki, Ł.
Dużyńska, A.
Domagala, J.
Witkowski, B.
Krajewski, T.
Przeździecka, E.
Guziewicz, M.
Wierzbicka, A.
Kopalko, K.
Figge, S.
Hommel, D.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492723.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Aa
61.05.cp
81.05.Dz
Opis:
Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detector with High Internal Photocurrent Gain Based on ZnO:N
Autorzy:
Kosyachenko, L. A.
Lashkarev, G. V.
Ievtushenko, A. I.
Lazorenko, V. I.
Sklyarchuk, V. M.
Sklyarchuk, O. F.
Powiązania:
https://bibliotekanauki.pl/articles/2048107.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.-z
85.60.Dw
Opis:
The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 681-682
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures
Autorzy:
Bertram, F.
Christen, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046894.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
78.66.Hf
81.05.Dz
81.15.Gh
Opis:
The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo- and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 103-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Resolution X-Ray Diffraction Studies on MBE-Grown p-ZnTe/n-CdTe Heterojunctions for Solar Cell Applications
Autorzy:
Wichrowska, K.
Domagala, J.
Wosinski, T.
Chusnutdinow, S.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1375736.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
81.05.Dz
81.15.Hi
88.40.jm
Opis:
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and misfit strain in p-ZnTe/n-CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different (001)-oriented substrates of GaAs and CdTe. The X-ray diffractometer results indicate that the CdTe layers, grown on lattice mismatched GaAs substrate, are partially relaxed, by the formation of misfit dislocations at the interface, and display residual vertical strain of the order of $10^{-4}$. The presence of threading dislocations in the layers effectively limits the efficiency of solar energy conversion in the investigated heterojunctions. Homoepitaxially grown CdTe layers, of much better structural quality, display unexpected compressive strain in the layers and the relaxed lattice parameter larger than that of the substrate. Possible reasons for the formation of that unusual strain are discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1083-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
Autorzy:
Ievtushenko, A.
Lashkarev, G.
Lazorenko, V.
Karpyna, V.
Sichkovskyi, V.
Kosyachenko, L.
Sklyarchuk, V.
Sklyarchuk, O.
Bosy, V.
Korzhinski, F.
Ulyashin, A.
Khranovskyy, V.
Yakimova, R.
Powiązania:
https://bibliotekanauki.pl/articles/1811930.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
85.60.Dw
72.40.+w
Opis:
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1123-1129
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering
Autorzy:
Ievtushenko, A.
Karpyna, V.
Lashkarev, G.
Lazorenko, V.
Baturin, V.
Karpenko, A.
Lunika, M.
Dan'ko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811931.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
61.05.cp
68.55.jm
Opis:
Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1131-1137
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Scattering from ZnSe Nanolayers
Autorzy:
Nesheva, D.
Šćepanović, M.
Aškrabić, S.
Levi, Z.
Bineva, I.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1807824.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Ef
81.05.Dz
78.30.-j
68.55.-a
Opis:
A series of ZnSe single layers having thickness between 30 nm and 1 μm was deposited on c-Si and glass substrates at room substrate temperature. Thermal evaporation of ZnSe powder in high vacuum has been applied. Moreover, $SiO_x$/ZnSe periodic multilayers prepared by the same deposition technique and having ZnSe layer thickness of 2 and 4 nm have been studied. Raman spectra were measured at 295 K, using the 442 nm line of a He-Cd laser as well as different lines of the $Ar^+$ or $Ar^+//Kr^+$ lasers. The observed Raman features have been related to multiple optical phonon (1LO to 4LO) light scattering and connected with the existence of randomly oriented crystalline ZnSe grains in both ZnSe single layers and ZnSe layers of the multilayers. Relatively large line width ( ≈ 15 $cm^{-1}$) of the 1LO band has been observed and related to lattice distortion in the crystalline grains and existence of amorphous phase in the layers thinner than 100 nm. The Raman spectra measured on both ZnSe single layers and $SiO_x$/ZnSe multilayers using the 488 nm line with a gradually increased laser beam power indicate an increased crystallinity at high irradiation levels.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 75-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation
Autorzy:
Virt, I.
Hadzaman, I.
Bilyk, I.
Rudyi, I.
Kurilo, I.
Frugynskyi, M.
Potera, P.
Powiązania:
https://bibliotekanauki.pl/articles/1549722.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Fg
72.80.Ey
78.20.Ci
Opis:
The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and $Zn_{1-x}Mn_{x}O$ of different thickness were obtained on $Al_{2}O_{3}$, glass, and KCl substrates in vacuum of 1 × $10^{-5}$ Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 μm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 34-37
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Tin Oxide Based Nanocomposites for Li-Ion Batteries
Autorzy:
Cevher, O.
Cetinkaya, T.
Tocoglu, U.
Guler, M.
Akbulut, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399889.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.30.rh
81.05.Dz
81.15.Cd
82.47.Aa
Opis:
In this work, tin oxide ($SnO_2$) films were deposited on multiwall carbon nanotube buckypaper using a rf magnetron sputter process in a mixed oxygen/argon (1/9) gas environment. Conditions for the growth of $SnO_2$ thin films on multiwall carbon nanotube buckypaper by rf sputtering are: target composition $SnO_2$ (99.999 wt%); total system pressure 1 Pa; sputtering power (rf) 75, 100 and 125 W, respectively; $O_2//Ar$ (1/9) gas mixture. The surface morphology of the $SnO_2$ multiwall carbon nanotube composite films was investigated by scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The electrochemical properties of $SnO_2$ multiwall carbon nanotube composite anodes were investigated by galvanostatic charge-discharge experiments.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 358-360
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
Autorzy:
Guziewicz, E.
Lukasiewicz, M.
Wachnicki, L.
Kopalko, K.
Dłużewski, P.
Jakiela, R.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492604.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.At
75.50.Pp
81.05.Dz
81.15.Gh
Opis:
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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