Temat: 81.10.Bk - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
Autorzy:: Mycielski, A.
Szadkowski, A.
Łusakowska, E.
Kowalczyk, L.
Domagała, J.
Bąk-Misiuk, J.
Wilamowski, Z.
Witkowska, B.
Powiązania:: https://bibliotekanauki.pl/articles/1991957.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.10.Bk
Opis:: The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 441-445
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
Autorzy:: Mazur, P.
Zuber, S.
Grodzicki, M.
Ciszewski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1195467.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:: Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1131-1133
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Sb Layers on p-GaN: UPS, XPS and LEED Study
Autorzy:: Grodzicki, M.
Mazur, P.
Pers, J.
Zuber, S.
Ciszewski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1376064.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:: The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1128-1130
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: Substrates Grown from the Vapor for ZnO Homoepitaxy
Autorzy:: Skupiński, P.
Kopalko, K.
Łusakowska, E.
Domukhovski, V.
Jakieła, R.
Mycielski, A.
Grasza, K.
Powiązania:: https://bibliotekanauki.pl/articles/1811990.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
68.47.Fg
68.55.J-
68.37.Ps
81.10.Bk
81.15.-z
Opis:: The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1361-1368
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "81.10.Bk" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język