- Tytuł:
- Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes
- Autorzy:
-
Dyba, P.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Szatkowski, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1791359.pdf
- Data publikacji:
- 2009-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.Dz
85.30.De
84.37.+q - Opis:
- Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy $E_2$ = 0.33 eV and capture cross-section σ_2 = 3 × $10^{-15} cm^2$ has been assigned to the gallium related DX center present in the CdTe material.
- Źródło:
-
Acta Physica Polonica A; 2009, 116, 5; 944-946
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł