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    Wyświetlanie 1-7 z 7
    Tytuł:
    Solubility and Segregation of Co in CdTe-Based Ternary and Quaternary Alloys
    Autorzy:
    Miotkowska, S.
    Dynowska, E.
    Miotkowski, I.
    Alawadhi, H.
    Lewicki, A.
    Metcalf, P. A.
    Ramdas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030667.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.-h
    Opis:
    Single crystals of Cd$\text{}_{1-x}$Co$\text{}_{x}$Te and Cd$\text{}_{1-x-y}$Co$\text{}_{x}$Mn$\text{}_{y}$Te are characterized with X-ray powder diffraction and electron microprobe to establish compositional dependence of the lattice parameters and deduce Co solubility limit. The experimental compositional profiles are examined on specimens taken from various locations of ingots along their longitudinal axes and compared with normal freezing distributions. The values of Co segregation coefficient are analyzed for both ternary and quaternary alloys in terms of normal freezing mode.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 735-742
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication, Structural Characterization and Optical Properties of the Flower-Like ZnO Nanowires
    Autorzy:
    Feng, L.
    Liu, A.
    Ma, Y.
    Liu, M.
    Man, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538755.pdf
    Data publikacji:
    2010-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Bc
    81.05.Dz
    81.10.Aj
    Opis:
    Multipod flower-like zinc oxide (ZnO) nanowires have been successfully synthesized on Si(111) substrates using a pulsed laser deposition prepared Zn film as "self-catalyst" by the simple thermal evaporation oxidation of the metallic zinc powder at 850°C without any other catalysts or additives. The pre-deposited Zn films by pulsed laser deposition on the substrates can promote the formation of the ZnO nuclei effectively. Also it can further advance the growth of the flower-like ZnO nanowires accordingly. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, Fourier transform infrared spectrum, and photoluminescence were used to analyze the structure, morphology, composition and optical properties of the as-synthesized products. The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure, grown along the [0001] in the c-axis direction. Room temperature photoluminescence spectrum of the ZnO nanowires shows a nearband-edge ultraviolet emission (peak at ≈ 384 nm) and a deep-level green emission (peak at ≈ 513 nm). In addition, the growth mechanism of the flower-like ZnO nanowires is discussed in detail.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 3; 512-517
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
    Autorzy:
    Mazur, P.
    Zuber, S.
    Grodzicki, M.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195467.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1131-1133
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sb Layers on p-GaN: UPS, XPS and LEED Study
    Autorzy:
    Grodzicki, M.
    Mazur, P.
    Pers, J.
    Zuber, S.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376064.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1128-1130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Substrates Grown from the Vapor for ZnO Homoepitaxy
    Autorzy:
    Skupiński, P.
    Kopalko, K.
    Łusakowska, E.
    Domukhovski, V.
    Jakieła, R.
    Mycielski, A.
    Grasza, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811990.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.47.Fg
    68.55.J-
    68.37.Ps
    81.10.Bk
    81.15.-z
    Opis:
    The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1361-1368
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates
    Autorzy:
    Kaleta, A.
    Kret, S.
    Sanchez, A.
    Bilska, M.
    Kurowska, B.
    Szczepańska, A.
    Płachta, J.
    Wojnar, P.
    Wojciechowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032910.pdf
    Data publikacji:
    2017-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.07.-b
    61.46.-w
    62.23.Hj
    81.07.Gf
    61.46.Km
    78.67.Uh
    07.10.Pz
    68.35.Gy
    68.37.Lp
    68.37.Og
    68.37.Ma
    Opis:
    In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 5; 1399-1405
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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