Autor: Kowalski, K. J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:: Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1991616.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Nr
79.60.-i
Opis:: Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 401-405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy
Autorzy:: Kowalski, B. J.
Orlowski, B. A.
Pietrzyk, M.
Kaczor, P.
Kopalko, K.
Mickievicius, S.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2044491.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.23.-k
Opis:: The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp$\text{}^{3}$ bands of the semiconductor are discussed.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 735-740
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:: Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.Fx
79.60.-i
Opis:: We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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