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Wyświetlanie 1-15 z 19
Tytuł:
Signatures of p-Shell Electron g-Factor in s-Shell Emission of CdTe/ZnTe Quantum Dots
Autorzy:
Kazimierczuk, T.
Goryca, M.
Wojnar, P.
Golnik, A.
Nawrocki, M.
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492860.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Hc
Opis:
We analyze the photoluminescence of excitonic complexes containing p-shell electron in the magnetic field in the Faraday configuration. We demonstrate that despite the p-shell electron is not involved directly in the recombination process, its g-factor influences the emission spectrum. We found that in the case of CdTe/ZnTe quantum dots the p-shell electron is significantly less affected by the magnetic field than s-shell electron in the same dot.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 874-876
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Subband Mixing and Polarization of Luminescence from Quantum Dashes: A Simple Model
Autorzy:
Kaczmarkiewicz, P.
Musiał, A.
Sęk, G.
Podemski, P.
Machnikowski, P.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/2048063.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
73.22.-f
Opis:
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the selective polarization properties of such structures. It shows that they are not a straightforward consequence of the geometry but are related to it via valence subband mixing. Our model allows us to predict the degree of polarization dependence on the in-plane dimensions of investigated structures assuming a predominantly heavy hole character of the valence band states, simplifying the shape of confining potential and neglecting the influence of the out-of-plane dimension. The energy dependence modeling reveals the importance of different excited states in subsequent spectral ranges leading to non-monotonic character of the degree of polarization. The modeling results show good agreement with the experimental data for an ensemble of InAs/InP quantum dashes for a set of realistic parameters with the heavy-light hole states separation being the only adjustable one. All characteristic features are reproduced in the framework of the proposed model and their origin can be well explained and understood. We also make some further predictions about the influence of both the internal characteristics of the nanostructures (e.g. height) and the external conditions (excitation power, temperature) on the overall degree of polarization.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 633-636
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure
Autorzy:
Pieczarka, M.
Maryński, A.
Podemski, P.
Misiewicz, J.
Spencer, P.
Murray, R.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1185237.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.-m
Opis:
We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-59-A-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Excitonic Magnetoabsorption of Cylindrical Quantum Disks
Autorzy:
Schillak, P.
Czajkowski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492888.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
73.22.Dj
73.21.La
71.35.Ji
Opis:
We show how to compute the optical functions (the complex magnetosusceptibility, dielectric function, magnetoreflection) for semiconductor quantum disks exposed to a uniform magnetic field in the growth direction, including the excitonic effects. The method uses the microscopic calculation of nanostructure excitonic wave functions and energy levels, and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. The electron-hole screened Coulomb potential is adapted and the valence band structure is taken into account in the cylindrical approximation, thus separating light- and heavy-hole motions. The confinement potentials are taken as step-like both in the z and in-plane directions. Numerical calculations have been performed for $In_{0.55}Al_{0.45}As$ (disk)/$Al_{0.35}Ga_{0.65}As$ (barrier) and InP/GaP disks and the results are in a good agreement with the available experimental data.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 888-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots
Autorzy:
Žurauskienė, N.
Marcinkevičius, S.
Janssen, G.
Goovaerts, E.
Nötzel, R.
Koenraad, P.
Wolter, J.
Powiązania:
https://bibliotekanauki.pl/articles/1178362.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.47.+p
76.70.Hb
Opis:
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 435-439
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrooptical Properties of Cylindrical Quantum Dots
Autorzy:
Schillak, P.
Czajkowski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1791330.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.30.Fs
78.67.Hc
78.67.-n
78.90.+t
Opis:
We show how to compute the optical functions (the complex electrosusceptibility tensor, dielectric tensor, electroreflection spectra) for semiconductor quantum dots exposed to a uniform static electric field in the growth direction, including the excitonic effects. The method uses the microscopic calculation of the quantum dot excitonic wave functions and energy levels, and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. The electron-hole screened Coulomb potential is adapted and the valence band structure is taken into account in the cylindrical approximation, thus separating light- and heavy-hole motions. In the microscopic calculations, using the effective-mass approximation, we solve the 6-dimensional two-particle Schrödinger equation by transforming it into an infinite set of coupled second order 2-dimensional differential equations with the appropriate boundary conditions. These differential equations are solved numerically giving the eigenfunctions and the energy eigenvalues. Having them, we can compute the quantum dot electrooptical functions. Numerical calculations have been performed for an InGaAs quantum dot with a constant electric field applied in the growth direction. A good agreement with experiment is obtained.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 871-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Phonon-Assisted Radiative Recombination of Excitons Confined in InAs Quantum Dashes
Autorzy:
Dusanowski, Ł.
Musiał, A.
Sęk, G.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1399092.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
63.20.kk
Opis:
In this report we have investigated theoretically the phonon-assisted recombination process of excitons confined in strongly elongated semiconductor nanostructures, called quantum dashes. Interaction with phonon bath leads to the occurrence of phonon-assisted recombination, which in the case of acoustic phonons is manifested in the optical spectra as a deviation of the homogeneously broadened emission line shape from expected Lorentzian profile via occurrence of the so-called phonon sidebands. Hereby, we have modeled the influence of the quantum dash geometry on this spectral feature proving pronounced suppression of phonon-induced decoherence for strongly elongated nanostructures. Furthermore, the importance of different phonon coupling mechanisms has been evaluated and the spectral diffusion effects, unavoidable in the time-integrated photoluminescence experiments, have been accounted for.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 813-816
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
Autorzy:
Musiał, A.
Sęk, G.
Maryński, A.
Podemski, P.
Misiewicz, J.
Löffler, A.
Höfling, S.
Reitzenstein, S.
Reithmaier, J.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492876.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
65.80.-g
Opis:
Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Related Spectroscopy of CdTe-Based Quantum Dots
Autorzy:
Gaj, J.
Kazimierczuk, T.
Goryca, M.
Koperski, M.
Golnik, A.
Kossacki, P.
Nawrocki, M.
Wojnar, P.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1585136.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.70.Gm
75.75.+a
78.55.Et
Opis:
This work contains a selection of our recent experimental results in the field of the spin-related spectroscopy of individual CdTe-based quantum dots. After a short description of the sample growth and experimental methods, optical measurements of the charge state dynamics are presented. Then the influence of in-plane anisotropy of the excitonic states of a quantum dot is discussed, followed by a description of experimental studies of information read-out and writing on quantum dot spin states. In particular, spin memory of a single $Mn^{++}$ ion embedded in a CdTe quantum dot is quantitatively assessed. In an outlook part, perspectives opened by recently developed ZnTe lattice-matched Bragg reflectors are discussed.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 795-799
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of an Electric Field on Fine Properties of III-V and II-VI Quantum Dots Systems
Autorzy:
Kowalik, K.
Krebs, O.
Kudelski, A.
Golnik, A.
Lemaître, A.
Senellart, P.
Karczewski, G.
Kossut, J.
Gaj, J.
Voisin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2038219.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.70.Ej
Opis:
We investigate the influence of an electric field on the optical properties of single quantum dots. For sample made of III-V compounds micron-size electro-optical structures were produced in order to apply an electric field in the dot plane. For several individual dots lines significant variations of the anisotropic exchange splitting with the field were observed. On sample made of II-VI compounds we demonstrate the influence of electric field fluctuations on the luminescence of a single quantum dot.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 177-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Anisotropy of Quantum Disks in the External Static Magnetic Field
Autorzy:
Schillak, P.
Czajkowski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1811986.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Cc
71.35.Ji
73.21.La
78.20.Ls
78.67.Hc
Opis:
We show how to compute the optical functions (the complex magneto-susceptibility, dielectric function, magneto-reflection and ellipsometric spectra) for semiconductor quantum disks exposed to a uniform magnetic field in the growth direction, including the excitonic effects. The optical response is calculated for an oblique incidence of the propagating electromagnetic wave and for input waves with different polarization. The method uses the microscopic calculation of nanostructure excitonic wave functions and energy levels, and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. The electron-hole screened Coulomb potential is adapted and the valence band structure is taken into account in the cylindrical approximation, thus separating light- and heavy-hole motions. The novelty of our approach is that the solution is obtained in terms of known one-particle electron and hole eigenfunctions, since, in the considered nanostructure due to confinement effects accompanied by the e-h Coulomb interaction, the separation of the relative- and center-of-mass motion is not possible. We obtain both the eigenvalues and the eigenfunctions. The convergence of the proposed method is examined. We calculate the magnetooptical functions, including the optical Stokes parameters and ellipsometric functions for the case of oblique incidence. Numerical calculations were performed for InAs (disk)/ GaAs (barrier) disks. A good agreement with experiments was obtained.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1349-1354
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimizing the InGaAs/GaAs quantum dots for 1.3 μm emission
Autorzy:
Maryński, A.
Mrowiński, P.
Ryczko, K.
Podemski, P.
Gawarecki, K.
Musiał, A.
Misiewicz, J.
Quandt, D.
Strittmatter, A.
Rodt, S.
Reitzenstein, S.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1055140.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.-n
78.67.Hc
73.22.-f
Opis:
Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 386-390
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
Autorzy:
Mrowiński, P.
Tarnowski, K.
Olszewski, J.
Somers, A.
Kamp, M.
Höfling, S.
Reithmaier, J.
Urbańczyk, W.
Misiewicz, J.
Machnikowski, P.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1159588.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.-m
Opis:
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Structure of Elongated $In_{0.3}Ga_{0.7}As//GaAs$ Quantum Dots
Autorzy:
Pieczarka, M.
Musiał, A.
Podemski, P.
Sęk, G.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399091.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
73.21.La
73.22.-f
Opis:
In this contribution the electronic structure of large $In_{0.3}Ga_{0.7}As//GaAs$ quantum dots is studied theoretically by means of 8 band k · p modeling. These quantum dots constitute unique physical system due to the low strain limit of the Stranski-Krastanow growth mode resulting in relatively large physical volume and elongation of the quantum dots in [1-10] direction. As a result of these critical growth conditions the electronic structure is expected to be very sensitive to the nanostructure size, shape, and composition of the quantum dot as well as the accompanying wetting layer. Another peculiarity of investigated system is the confining potential which is rather shallow and weakened in comparison to standard quantum dots. It makes them very interesting in view of both fundamental study and potential applications. To reveal physical mechanisms determining the optical properties of the investigated system, the electronic structure, mainly the number of confined states, and the wave function extension as a function of both quantum dot size and geometry have been simulated numerically and the importance of electron-hole Coulomb interactions has been evaluated.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of Optical Transitions from CdTe and CdMnTe Quantum Dots Embedded in ZnTe Nanowires
Autorzy:
Szymura, M.
Kłopotowski, Ł.
Wojnar, P.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399096.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Uh
78.67.Hc
Opis:
We study photoluminescence properties of CdTe and CdMnTe quantum dots embedded in ZnTe nanowires. The nanowires were grown by molecular beam epitaxy, applying the vapor-liquid-solid growth mechanism. Linear polarization anisotropy measurements allow us to assess that the excitonic transitions originate from a single nanowire. We identify the optical transitions by comparing observed spectroscopic shifts with the universal emission pattern from the epitaxial CdTe dots. We support this identification by analyzing the photoluminescence intensity dependence on excitation power.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 824-826
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

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