- Tytuł:
- Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
- Autorzy:
-
Mickevičius, J.
Tamulaitis, G.
Kuokštis, E.
Shur, M.
Yang, J.
Gaska, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1811960.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
78.67.De - Opis:
- Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1247-1252
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł