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Wyszukujesz frazę "Korona, K. P." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
    Autorzy:
    Korona, K. P.
    Babiński, A.
    Raymond, S.
    Wasilewski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046919.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    72.20.Jv
    78.67.Hc
    78.55.Cr
    Opis:
    We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 219-224
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers
    Autorzy:
    Korona, K. P.
    Borysiuk, J.
    Skierbiszewski, C.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047384.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    72.20.Jv
    78.55.Cr
    Opis:
    We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 243-247
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Measurements of Low-Temperature InAlAs
    Autorzy:
    Korona, K. P.
    Wysmołek, A.
    Bożek, R.
    Kamińska, M.
    Baranowski, J. M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923833.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.60.Br
    78.55.Cr
    Opis:
    Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
    Autorzy:
    Korona, K. P.
    Baranowski, J. M.
    Pakuła, K.
    Monemar, B.
    Bergman, J. P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968240.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.47.+p
    78.55.Cr
    Opis:
    Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coupling of LO Phonons to Excitons in GaN
    Autorzy:
    Wysmołek, A.
    Łomiak, P.
    Baranowski, J. M.
    Pakuła, K.
    Stępniewski, R.
    Korona, K. P.
    Grzegory, I.
    Boćkowski, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952430.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    63.20.Mt
    71.55.Eq
    Opis:
    The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 981-984
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Korona, K. P.
    Stępniewski, R.
    Knap, W.
    Pakuła, K.
    Baranowski, J. M.
    Grandjean, N.
    Massies, J.
    Prystawko, P.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036024.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.-r
    73.21.-b
    74.40.+k
    Opis:
    Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 573-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Dynamics of GaN/Si Nanowires
    Autorzy:
    Korona, K.
    Zytkiewicz, Z.
    Perkowska, P.
    Borysiuk, J.
    Binder, J.
    Sobanska, M.
    Klosek, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403621.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.22.-f
    78.47.jd
    Opis:
    In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes $n^2$ (Langevin) term and describes well the non-exponential dynamics of the excitonic band.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1001-1003
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas
    Autorzy:
    Korona, K.
    Drabińska, A.
    Surowiecka, K.
    Wołowiec, L.
    Borysiuk, J.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811946.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    78.55.Cr
    72.40.+w
    Opis:
    We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1179-1186
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations
    Autorzy:
    Dróżdż, P.
    Korona, K.
    Sarzyński, M.
    Czernecki, R.
    Skierbiszewski, C.
    Muzioł, G.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185815.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.22.-f
    78.47.jd
    Opis:
    The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1209-1212
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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