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Wyświetlanie 1-15 z 65
Tytuł:
Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy
Autorzy:
Böttcher, T.
Einfeldt, S.
Figge, S.
Kirchner, V.
Hommel, D.
Selke, H.
Ryder, P. L.
Bertram, F.
Riemann, T.
Christen, J.
Lunz, U.
Becker, C. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969025.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Dv
68.65.+g
78.20.-e
78.55.-m
78.55.Cr
Opis:
The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 260-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells
Autorzy:
Baranowski, M.
Kudrawiec, R.
Latkowska, M.
Syperek, M.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403636.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.20.Bh
78.55.Qr
Opis:
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1022-1025
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Transfer States of Transition Metal and Rare Earth Ions: Their Role in Recombination Processes
Autorzy:
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929777.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.55.Cr
78.55.Et
Opis:
Center ionization accompanied by carrier localization at the center by virtue of a short-range or a long-range Coulomb attractive potential is discussed. The role of charge transfer states in recombination processes is described. The source of carrier attractive potential is explained and a simple theoretical model is presented allowing to predict the nature (either electron or hole attractive) of this potential. The probability of different possible recombination paths is also analyzed.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 849-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra
Autorzy:
Baranowski, M.
Latkowska, M.
Kudrawiec, R.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492914.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
78.20.Bh
Opis:
Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 899-901
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen Tuning of (InGa)(AsN) Optical Properties
Autorzy:
Baldassarri H. v. H., G.
Ranalli, F.
Bissiri, M.
Gaspari, V.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/2028813.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.55.Eq
78.55.Cr
Opis:
The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 373-378
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots
Autorzy:
Molas, M.
Gołasa, K.
Piętka, B.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1403612.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 988-990
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of InAs Quantum Dots
Autorzy:
Willander, M.
Zhao, Q. X.
Jacob, A. P.
Wang, S. M.
Wei, Y. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035579.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
Opis:
InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 567-576
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Study of Bulk GaN Doped with Beryllium
Autorzy:
Jaworek, M.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2043722.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
71.55.-i
71.35.-y
Opis:
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 705-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intershell Exchange Interaction in Charged GaAlAs Quantum Dots
Autorzy:
Molas, M.
Nicolet, A.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399082.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
71.35.-y
78.55.Cr
71.70.Gm
Opis:
Optical anisotropy of charged excitons and biexcitons related to the single-particle s- and p-shell emission in GaAlAs/AlAs quantum dots is investigated. The polarization-dependence and time-resolved micro-photoluminescence measurements were performed. Cross-correlation measurements were used to identify the ladder of excitonic states and allowed us to show two cascade pathways, including the spin singlet and triplet states of charged excitons and biexcitons. The fine structure of the studied states is described and analysed in terms of electron-electron, hole-hole, and electron-hole exchange interactions.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 785-787
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:
Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots
Autorzy:
Molas, M.
Gołasa, K.
Furman, M.
Lapointe, J.
Wasilewski, Z.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1403615.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 991-993
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
Autorzy:
Syperek, M.
Ryczko, K.
Dallner, M.
Dyksik, M.
Motyka, M.
Kamp, M.
Höfling, S.
Misiewicz, J.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1398579.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.47.D-
78.30.Fs
78.47.jg
78.55.Cr
78.67.De
Opis:
Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1224-1228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
Autorzy:
Wysmołek, A.
Bożek, R.
Babiński, A.
Hennel, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/1923845.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.55.Cr
Opis:
We report luminescence measurements of the intracenter transition $\text{}^{3}$T$\text{}_{2}$ → $\text{}^{3}$A$\text{}_{2}$ of the V$\text{}^{3+}$(3d$\text{}^{2}$) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as S$\text{}_{A}$ = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 837-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Hydrogen on the Electronic Properties of GaAs$\text{}_{1-y}$N$\text{}_{y}$ Heterostructures
Autorzy:
Bissiri, M.
Gaspari, V.
Baldassarri H. v. H., G.
Ranalli, F.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/2028796.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.55.Eq
78.55.Cr
Opis:
We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs$\text{}_{1-y}$N$\text{}_{y}$/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y≈ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y≈0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N$\text{}^{-}$ -H$\text{}^{+}$ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs$\text{}_{1-y}$N$\text{}_{y}$.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 365-371
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
Autorzy:
Moldavskaya, L. D.
Shashkin,, V. I.
Drozdov,, M. N.
Daniltsev, V. M.
Antonov, A. V.
Yablonsky, A. N.
Powiązania:
https://bibliotekanauki.pl/articles/2036025.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.55.Cr
78.66.Fd
Opis:
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 579-584
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 65

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