Autor: Kaczor, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
Autorzy:: Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1929652.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 555-558
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:: Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon
Autorzy:: Kopalko, K.
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1890843.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD$\text{}^{+}$ . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 345-348
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Absorption Studies of the Sulphur Donor in GaSb
Autorzy:: Kaczor, P.
Gerrits, A. M.
Dobaczewski, L.
Kaliński, Z.
Wittlin, A.
Powiązania:: https://bibliotekanauki.pl/articles/1873018.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
71.70.Ej
78.50.Ge
Opis:: The shallow-deep bistability of the sulphur-related DX centre in GaSb is demonstrated. After photoexcitation of the defect with the near-band gap light the metastable inter-donor transition in the far infrared can be observed. This observation allowed us to evaluate the polaron effective mass and polaron coupling constant for the material.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 399-402
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:: Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.50.Ge
76.30.Mi
Opis:: The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Formation of the DX State by Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As - Experiment
Autorzy:: Dobaczewski, L.
Kaczor, P.
Missous, M.
Żytkiewicz, Z. R.
Dobosz, D.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1924251.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.38.+i
71.55.Eq
78.50.Ge
Opis:: A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 905-907
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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