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Wyszukujesz frazę "Bergman, J." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si
    Autorzy:
    Godlewski, M.
    Bergman, J. P.
    Monemar, B.
    Rossner, U.
    Barski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950766.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    71.35.+z
    78.47.+p
    Opis:
    Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 789-792
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968089.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    An influence of doping level on exciton properties in n-doped multiple quantum well structures of CdTe/CdMnTe is studied for multiple quantum well structures prepared in the way that donor (indium) concentration changes within the length of the sample. We show that the formation scenario for neutral donor bound excitons in low-dimensional structures can be different from that observed in bulk samples. We further show that in the case of such quantum well structures we can selectively excite either photoluminescence emission of localized or donor bound excitons, which is a consequence of surprisingly weak energy transfer link between two types of excitonic transitions.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 757-760
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Holz, P. O.
    Bergman, J. P.
    Monemar, B.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952469.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.47.+p
    73.20.Jc
    Opis:
    The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1007-1011
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Bergman, J. P.
    Monemar, B.
    Barski, A.
    Langer, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968103.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.47.+p
    Opis:
    In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
    Autorzy:
    Godlewski, M.
    Kopalko, K.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952470.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.+z
    78.47.+p
    78.55.Et
    Opis:
    Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1012-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate
    Autorzy:
    Godlewski, M.
    Koziarska, B.
    Suchocki, A.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Bergman, J.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934057.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.-p
    78.47.+p
    73.20.Fz
    71.35.+z
    Opis:
    The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 985-989
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Holtz, P. O.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968096.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 765-768
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
    Autorzy:
    Korona, K. P.
    Baranowski, J. M.
    Pakuła, K.
    Monemar, B.
    Bergman, J. P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968240.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.47.+p
    78.55.Cr
    Opis:
    Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Surma, M.
    Wilamowski, Z.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Holtz, P. O.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968091.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 761-764
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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