- Tytuł:
- Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
- Autorzy:
-
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Springis, M.
Tale, I.
Yang, C. C. - Powiązania:
- https://bibliotekanauki.pl/articles/2041743.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.45.+h
78.47.+p
78.67.De - Opis:
- We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 256-260
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł