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    Wyświetlanie 1-14 z 14
    Tytuł:
    Fabrication and Characterization of Semiconductor CuCl Nanocrystals
    Autorzy:
    Mahtout, S.
    Belkhir, M. A.
    Samah, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2037157.pdf
    Data publikacji:
    2004-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.-n
    78.40.Fy
    78.40.-q
    Opis:
    CuCl nanocrystals were elaborated in a NaCl ionic matrix by doping the latter with copper powder during growth. Optical absorption measurements revealed nanocrystals with a mean size of order 32 Å. This is consolidated by the Raman scattering measurements which showed nanodomains of similar size. X-ray diffraction measurements indicate a good crystallinity of the matrix and confirm the presence of CuCl nanocrystals within our samples. The annealing effect at 300˚C showed an increase in CuCl nanocrystal size with annealing time and demonstrated clearly the existence of a compound containing copper within our samples.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 3; 279-286
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Absorption and Reflection Studies of Tl$\text{}_{4}$InGa$\text{}_{3}$S$\text{}_{8}$ Layered Single Crystals
    Autorzy:
    Goksen, K.
    Gasanly, N. M.
    Ozkan, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047363.pdf
    Data publikacji:
    2007-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.40.-q
    78.40.Fy
    Opis:
    The optical properties of Tl$\text{}_{4}$InGa$\text{}_{3}$S$\text{}_{8}$ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature asγ=-6.0×10$\text{}^{-4}$ eV/K. The absolute zero value of the band gap energy was obtained as E$\text{}_{gi}$(0)= 2.52 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength, and zero-frequency refractive index were found to be 5.07 eV, 26.67 eV, 8.82×10$\text{}^{13}$ m$\text{}^{-2}$, and 2.50, respectively.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 1; 93-100
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Combined (ZnSe/MgS)/ZnCdSe Bragg Reflectors Grown Using ZnS as a Sulphur Source
    Autorzy:
    Solnyshkov, D. D.
    Sorokin, S. V.
    Sedova, I. V.
    Toropov, A. A.
    Ivanov, S. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044540.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    Opis:
    We report on MBE growth and study of optical and structural properties of (ZnSe/MgS)/ZnCdSe distributed Bragg reflectors with λ=520 nm and R$\text{}_{max}$=97%. The samples were grown pseudomorphically on GaAs substrate using ZnS as a sulphur source. Scanning electron microscopy, X-ray diffraction, and optical measurements showed good optical and structural characteristics of the Bragg reflectors.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 873-877
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low-Temperature Thermoluminescence Studies on $TlInS_{2}$ Layered Single Crystals
    Autorzy:
    Isik, M.
    Delice, S.
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377812.pdf
    Data publikacji:
    2014-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    71.55.-i
    78.60.Kn
    Opis:
    Thermoluminescence characteristics of $TlInS_{2}$ layered single crystals grown by the Bridgman method were investigated in the low temperature range of 10-300 K. The illuminated sample with blue light ( ≈ 470 nm) at 10 K was heated at constant heating rate. Curve fitting, initial rise and various heating rate methods were used to determine the activation energy of the trap levels. All applied methods showed good consistency about the presence of five trapping centers located at 14, 19, 350, 420, and 520 meV. Behavior of the TL curve for various heating rates was investigated. Traps distribution has also been studied. The activation energies of the distributed trapping centers were found to be increasing from 14 to 46 meV.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 6; 1299-1303
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of SbSI Photonic Crystals
    Autorzy:
    Starczewska, A.
    Szperlich, P.
    Nowak, M.
    Bednarczyk, I.
    Bodzenta, J.
    Szala, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376062.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.70.Qs
    77.84.-s
    78.40.Fy
    Opis:
    Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The $SiO_{2}$ nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1118-1120
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light
    Autorzy:
    Bardyszewski, W.
    Łepkowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492909.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    78.20.Bh
    78.30.Fs
    Opis:
    We show theoretically that for narrow GaN/AlGaN quantum wells, lattice matched to GaN substrate/buffer and grown along the (0001) crystallographic direction the topmost valence subband symmetry depends critically on such parameters as quantum well thickness and barrier composition. This effect determines polarization of the emitted light. It is noted that the symmetry of the topmost valence band level is sensitive to the values of the $D_3$ and $D_4$ deformation potentials and can be employed in verification of existing literature values of these parameters.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 894-896
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of the Built-In Strain on the In-Plane Optical Anisotropy of m-Plane GaN/AlGaN Quantum Wells
    Autorzy:
    Łepkowski, S.
    Bardyszewski, W.
    Teisseyre, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492913.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    78.20.Bh
    78.30.Fs
    Opis:
    We study theoretically the influence of the anisotropic biaxial strain originating from the lattice mismatch between the m-plane GaN/AlGaN quantum wells structure and the substrate on the optical anisotropy of such systems. It is demonstrated that the oscillator strengths for optical transitions with polarization of light parallel and perpendicular to the crystal axis c strongly depend on strain to such an extent that, by increasing the concentration of Al in the substrate from x = 0 to x = 0.5 one can change the polarization of the emitted light with respect to the c-axis by 90 degrees.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 897-898
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pressure Dependence of Exciton Binding Energy in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N Quantum Wells
    Autorzy:
    Bardyszewski, W.
    Łepkowski, S. P.
    Teisseyre, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048086.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    78.20.Bh
    78.30.Fs
    Opis:
    We present a theoretical study of excitons in GaN/Al$\text{}_{x}$Ga$\text{}_{1 - x}$N wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 663-665
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stokes Shift and Band Gap Bowing in $In_xGa_{1-x}N$ (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy
    Autorzy:
    Yildiz, A.
    Dagdelen, F.
    Aydogdu, Y.
    Acar, S.
    Lisesivdin, S.
    Kasap, M.
    Bosi, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813499.pdf
    Data publikacji:
    2008-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.-r
    78.20.-e
    78.40.Fy
    78.55.-m
    Opis:
    We presented the results of electrical and optical studies of the properties of $In_xGa_{1-x}N$ epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for $In_xGa_{1-x}N$ alloys is well fitted with a bowing parameter of≈3.6 eV.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 2; 731-739
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects
    Autorzy:
    Keskenler, E.
    Aydın, S.
    Turgut, G.
    Doğan, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205375.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.66.Hf
    78.40.Fy
    78.66.Jg
    68.37.Yz
    68.55.ag
    68.60.Bs
    Opis:
    Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin films were prepared on glass substrates by sol-gel spin coating technique using homogeneous precursor solutions, and effects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO films shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi films varied between 44.33 meV and 442.67 meV, and 58.3 × $10^{-2}$ and 5.8 × $10^{-2}$, respectively. The Urbach energies of the films increased with an increase in the Bi doping concentration and a great difference was observed for 7.0 mol.% doping. The band gap values of the films exhibited a fluctuated behavior as a result of doping effect.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 782-786
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitons and Trions in Modulation Doped Structures in High Magnetic Fields
    Autorzy:
    Kochereshko, V.
    Andronikov, D.
    Platonov, A.
    Crooker, S.
    Barrick, T.
    Karczewski, G.
    Tronc, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038321.pdf
    Data publikacji:
    2004-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    71.35.-y
    78.20.Ls
    78.40.Fy
    Opis:
    Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 3; 319-328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Femtosecond Dynamics of Neutral and Charged Exciton Absorption in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Quantum Well
    Autorzy:
    Płochocka, P.
    Kossacki, P.
    Maślana, W.
    Radzewicz, C.
    Gaj, J. A.
    Cibert, J.
    Tatarenko, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035611.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    78.47.+p
    78.67.De
    Opis:
    We present a study of time-dependent transmission spectra of a modulation-doped Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te/Cd$\text{}_{1-y-z}$Zn$\text{}_{y}$Mg$\text{}_{z}$Te quantum well with variable hole gas concentration. We study the influence of pump pulses on excitonic absorption in subpicosecond time scale. A spectrally broad probe pulse of duration of 40 femtoseconds was used to record the absorption spectra at controlled delay. Studies of temporal evolution of exciton energies revealed coherence decay of linearly polarized excitons and thermalization of non-equilibrium exciton states. We found that a characteristic timescale for thermalization of non-equilibrium populations of photocreated excitons is between 0.8 and 3.6 ps. The timescale of this process depends on the hole concentration in quantum well: for higher hole concentration the decay is faster. Long-lived photo-induced magnetization accompanied by heating of the magnetic system was also observed.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 679-686
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Nevou, L.
    Doyennette, L.
    Julien, F. H.
    Prystawko, P.
    Kryśko, M.
    Grzanka, S.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046911.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    78.66.-w
    78.67.De
    78.40.Fy
    81.15.Hi
    Opis:
    Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 175-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oscillator Strengths for Neutral, Charged, and Scattered Excitons in CdTe Quantum Wells Containing a 2D Electron Gas
    Autorzy:
    Cox, R. T.
    Huard, V.
    Bourgognon, C.
    Saminadayar, K.
    Tatarenko, S.
    Miller, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038298.pdf
    Data publikacji:
    2004-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.De
    78.40.Fy
    78.55.Et
    Opis:
    Absorption spectra have been measured for a 10 nm CdTe(0.3%Mn) quantum well with electron concentration n$\text{}_{e}$ variable up to 1.5×10$\text{}^{11}$cm$\text{}^{-2}$. Following recent theory appropriate to low n$\text{}_{e}$, here ≈0.1/π a$\text{}_{B}^{2}$, the spectra are interpreted in a "strong exciton" model, where the initial oscillator strength of the excitonic resonance (X) is conserved, with screening and phase-space filling effects negligible. As n$\text{}_{e}$ increases in zero-field and as the filling factorν increases in magnetic field, the intensity of X is transferred to: (i) trion processes, namely exciton-one electron scattering and the trion resonance (T), and (ii) quatron processes, namely exciton-two electron scattering and trion-one electron scattering. In magnetic field, the three- and four-body scattering processes become discrete, combined "exciton and cyclotron" and combined "trion and cyclotron" excitations that take all the intensity of X and T for ν≾1 and ν>2, respectively.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 3; 287-298
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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