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    Wyświetlanie 1-9 z 9
    Tytuł:
    Characterization of Transparent and Nanocrystalline $TiO_{2}:Nd$ Thin Films Prepared by Magnetron Sputtering
    Autorzy:
    Domaradzki, J.
    Wojcieszak, D.
    Prociow, E.
    Kaczmarek, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807648.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Rx
    68.55.-a
    68.60.-p
    68.60.Dv
    78.20.-e
    Opis:
    In this work structural and optical properties of $TiO_{2}$ thin films doped with different amount of Nd have been outlined. The result have shown that by quantity of Nd amount in the film dense nanocrystalline or amorphous thin films were obtained.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-75-S-77
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Thermal Annealing on Optical Properties of Implanted Gaas
    Autorzy:
    Kulik, M.
    Komarov, F. F.
    Mączka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011008.pdf
    Data publikacji:
    1999-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.60.Fs
    61.72.Vv
    78.20.-e
    Opis:
    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10$\text{}^{16}$ cm$\text{}^{-2}$ indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 1; 131-135
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
    Autorzy:
    Wysmołek, A.
    Baranowski, J. M.
    Kamińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934050.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    78.60.Kn
    Opis:
    We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 957-960
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of the Diffused Reflectance and Microstructure for the Phase Transformation of $KNO_{3}$
    Autorzy:
    Hafez, M.
    Yahia, I.
    Taha, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398861.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    64.60.-i
    61.43.Gt
    78.20.-e
    72.15.Eb
    Opis:
    Optical, micro-structural, thermal and electrical properties of the investigated potassium nitrate ($KNO_{3}$) samples were characterized by various techniques such as X-ray analysis, scanning electron microscopy, UV-VIS-NIR absorption and differential scanning calorimetry. The presence of structural phase transition is checked by differential scanning calorimetry, electrical and X-ray analysis measurement. The thermal energy required for such transformation is calculated and found to be 46.2 J/g. The activation energies of the electrical conduction for $KNO_{3}$ were found to be 0.236 eV for phase II and 0.967 eV for phase I. The optical band gaps of $KNO_{3}$ for the higher photon energy are calculated and equal to 5.03 and 5.01 eV for II and I phases, respectively and at lower photon energy, the values are equal to 3.84 and 3.80 eV for II and I phases, respectively. The data which leads to the interpretation of electronic spectra of potassium nitrate is possible to assume that the long wavelength part of absorption band corresponds to n-π* transition. Then, the short-wavelength part is probably due to the transition in a higher excited state of symmetry π-π*. The mean values of crystalline sizes are determined by scanning electron microscopy analysis. Such information can considerably aid in understanding the process of transformations near the phase crystal modifications at 129°C.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3; 734-740
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Five-Layered ZrO₂ and Single-Layered Ce, Eu, and Dy-Doped ZrO₂ Thin Films Prepared by Sol-Gel Spin Coating Method
    Autorzy:
    Çiçek Bezir, N.
    Evcin, A.
    Kayali, R.
    Özen, M.
    Esen, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1031178.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.-d
    68.55-a
    68.60-p
    78.20.-e
    81.10.Dn
    71.20.Be
    Opis:
    In order to investigate the influence of the number of layers on the properties of ZrO₂ thin films, we prepared one pure ZrO₂ film sample with five layers and Ce, Eu, and Dy-doped ZrO₂ samples with single layer, by spin-coating sol gel-method. The crystal structures of thin films were determined using X-ray diffraction, morphology of the samples was analyzed by scanning electron microscopy, and the optical properties of the samples were determined by ultraviolet/visible absorbance measurements. The results of these measurements have shown that the concentration of the dopants and the thickness of thin film layers play a vital role in the physical, chemical, and optical properties of the pure and doped ZrO₂ thin films.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 612-616
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Pure and Doped TiO₂ Thin Films Prepared by Sol-Gel Spin-Coating Method
    Autorzy:
    Çiçek Bezir, N.
    Evcin, A.
    Kayali, R.
    Özen, M.
    Balyaci, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1031525.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.-d
    68.55.-a
    68.60.-p
    78.20.-e
    81.10.Dn
    71.20.Be
    Opis:
    In this study, using spin-coating sol-gel method we fabricated TiO₂ thin films, doped with different concentrations (1, 2, and 3 mole %) of Ce, Dy, and Eu. Characterization of the prepared samples was performed by means of the X-ray diffraction, scanning electron microscopy, ultraviolet visible absorption, and differential thermal and thermo gravimetric analysis. X-ray diffraction measurements have shown that in Eu and Dy-doped samples crystal structure consists of mixed rutile and the dominant anatase phases, however the Ce doped samples consist of anatase phase only. Scanning electron microscopy images have revealed that while average thin film thickness of the Dy-doped samples decreases with increasing concentration of Dy, the average film thicknesses of samples doped with Ce and Eu increases with increasing concentrations of these dopants. Ultraviolet visible absorption spectroscopy measurements have shown that while absorbances of the samples doped by 1 and 2 mole % of the dopants have nearly similar properties, these properties differ from each other for 3 mole % of the dopants. Finally, differential thermal and thermo gravimetric analyses have shown that the chemical reactions and weight losses of the samples have occurred at the expected temperatures.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 620-624
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects
    Autorzy:
    Keskenler, E.
    Aydın, S.
    Turgut, G.
    Doğan, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205375.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.66.Hf
    78.40.Fy
    78.66.Jg
    68.37.Yz
    68.55.ag
    68.60.Bs
    Opis:
    Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin films were prepared on glass substrates by sol-gel spin coating technique using homogeneous precursor solutions, and effects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO films shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi films varied between 44.33 meV and 442.67 meV, and 58.3 × $10^{-2}$ and 5.8 × $10^{-2}$, respectively. The Urbach energies of the films increased with an increase in the Bi doping concentration and a great difference was observed for 7.0 mol.% doping. The band gap values of the films exhibited a fluctuated behavior as a result of doping effect.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 782-786
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermo-Optical Parameters of Amorphous a-C:N:H Layers
    Autorzy:
    Pieczyńska, E.
    Jaglarz, J.
    Marszalek, K.
    Tkacz-Śmiech, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377543.pdf
    Data publikacji:
    2014-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.60.Fs
    78.20.-e
    78.20.Ci
    78.20.N-
    78.30.Ly
    81.05.U-
    81.15.Gh
    Opis:
    Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 6; 1241-1245
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet
    Autorzy:
    Wiśniewski, K.
    Koepke, Cz.
    Wojtowicz, A. J.
    Drozdowski, W.
    Grinberg, M.
    Kaczmarek, S. M.
    Kisielewski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2007834.pdf
    Data publikacji:
    1999-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    78.55.-m
    78.60.Kn
    73.50.Gr
    29.40.Mc
    78.20.-e
    78.20.Wc
    78.40.-q
    Opis:
    In this paper we report preliminary results of optical studies on Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 3; 403-412
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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