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Wyświetlanie 1-15 z 38
Tytuł:
Influence of the Nanostructures on the Surface and Bulk Physical Properties of Materials
Autorzy:
Kamanina, N.
Shurpo, N.
Likhomanova, S.
Serov, S.
Vasilyev, P.
Pogareva, V.
Studenov, V.
Uskokovic, D.
Powiązania:
https://bibliotekanauki.pl/articles/1503338.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.-a
42.79.-e
78.20.-e
78.30.Na
Opis:
Fullerenes, nanotubes, quantum dots are considered as effective sensitizers to modify both the optical, nonlinear optical features, dynamic and polarization characteristics, as well as mechanical and spectral properties of the organic and inorganic materials. The correlation between photorefractivity and photoconductivity was supported and the relation between charge carrier mobility of pure conjugated structures and nanoobjects-doped ones has been revealed. An increase of transmission of nanostructured polarization films was observed. An extension of the nanocomposites applications area is considered.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 256-259
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Nanostructured Fe-Doped SnO₂
Autorzy:
Saleh, S.
Ibrahim, A.
Mohamed, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398977.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
61.05.C-
78.20.-e
Opis:
Nanocrystalline $Sn_{1-x}Fe_xO_2$ (where x = 0, 0.01, 0.02, 0.03 and 0.04) powders have been successfully synthesized by the hydrothermal method followed by sintering at 1000°C for 3 h. The morphology and structure of the samples have been analyzed by field emission scanning electron microscope and X-ray diffraction, respectively. X-ray diffraction results revealed that all diffraction peaks positions agree well with the reflection of a tetragonal rutile structure of SnO₂ phase without extra peaks. The formation of a tetragonal rutile structure of SnO₂ nanostructures was further supported by the Raman spectra. The band gap of Fe-doped SnO₂ nanoparticles was estimated from the diffuse reflectance spectra using the Kubelka-Munk function and it was decreasing slightly with the increase of Fe ion concentration from 3.59 to 3.52 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. The presence of chemical bonding was confirmed by the Fourier transform infrared spectra.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1220-1225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructured Materials for Optoelectronic Applications
Autorzy:
Kamanina, N.
Vasilyev, P.
Serov, S.
Savinov, V.
Bogdanov, K.
Uskokovic, D.
Powiązania:
https://bibliotekanauki.pl/articles/1537908.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.-a
42.79.-e
78.20.-e
78.30.Na
Opis:
Study and optimization of new nanoscale materials useful for optoelectronic application have been considered. The search for the effective nanostructured materials has been revealed in two directions: to optimize the mechanical hardness of the inorganic systems and to increase the photorefractive parameters of the organics with nanoobjects. It has been testified that the surface mechanical properties of the inorganic materials via nanotubes treatment process can be drastically improved. For example, the surface mechanical hardness of the UV and IR range soft materials can be increased up to 3-10 times under the conditions of oriented nanotubes placement. It has been obtained that the nonlinear optical characteristics (nonlinear refraction $n_{2}$ and cubic nonlinearity $χ^{(3)}$) of the organics thin films sensitized with fullerenes or nanotubes can be increased up to 3-4 orders of magnitude in comparison with the same parameters for bulk materials traditionally used for nonlinear optics.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 786-790
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption Edge and Optical Band Gap of $Ag-As_{40}S_{30}Se_{30}$ Amorphous Samples
Autorzy:
Čajko, K.
Lukić-Petrović, S.
Štrbac, D.
Powiązania:
https://bibliotekanauki.pl/articles/1401361.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.66.Jg
Opis:
The paper describes the results of a study of the influence of silver content on the absorption edge and optical band gap of the newly synthesized glasses of the $Ag_{x}(As_{40}S_{30}Se_{30})_{100-x}$ type for x=0, 0.5, 1, 2, 3, 5 at.% and of the corresponding films. The synthesis of bulk samples was performed in a rocking furnace from high-purity elemental components by a melt quenching method. Films were prepared from the synthesized bulk samples by pulsed laser deposition. Transmission spectra of the investigated samples were recorded at room temperature. The absorption edge and the optical band gap were determined by extrapolating the linear parts of the absorption spectra. It was found that the investigated range of Ag doping concentrations has a great influence on the absorption edge and optical band gap. Namely, with the increase of the silver content in the material the optical band gap showed a decrease. For films, it decreased from 2.02 eV, for the glass without silver, to 1.805 eV for the composition with 5 at.% Ag, whereas for the analogous bulk samples this decrease was from 1.84 eV to 1.609 eV.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1286-1288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in Optical Properties of Molecular Nanostructures
Autorzy:
Vučenović, S.
Šetrajčić, J.
Markoski, B.
Mirjanić, D.
Pelemiš, S.
Škipina, B.
Powiązania:
https://bibliotekanauki.pl/articles/1537873.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.+f
78.20.-e
78.66.-w
78.67.-n
Opis:
This paper represents an overview about exciton systems in the molecular nanostructures (ultra thin films and superlattices) and their implications on optical properties, primarily on absorption coefficient, which is given in the form of dielectric permittivity. With utilization of Green's function method, we have calculated dispersion law, spectral weight of exciton states and dielectric permittivity for every type of nanostructures. All obtained results are compared with optical properties in bulk crystals. Dielectric permittivity in all types of nanostructures shows very narrow and discrete dependence of external electromagnetic field frequency, which is a consequence of the expressed quantum effects, very thin thickness in these structures (or at least one dimension confinement) and boundary conditions.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 764-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Characterization of $TiO_2$ Thin Films Prepared by Sol-Gel Process
Autorzy:
Karabay, I.
Aydın Yüksel, S.
Ongül, F.
Öztürk, S.
Aslı, M.
Powiązania:
https://bibliotekanauki.pl/articles/1491461.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
81.20.Fw
61.05.cp
Opis:
Titanium dioxide $(TiO_2)$ thin films were prepared by spin coating technique of sol precursor on Corning 7059 glass substrates. Spectral transmittances of as deposited and annealed samples were measured in the range of 250 to 1100 nm. Optical band gaps were calculated from the Tauc plots and was found to be about 3.78 eV for the annealed samples at 500°C. X-ray diffraction patterns were performed with as deposited and annealed samples. By annealing the samples at 500C in various annealing times, the structure has changed from amorphous to the anatase crystalline state. Variations of the band gap energy values of $TiO_2$ films with cobalt doping were also investigated. Cobalt doping decreased the band gap value of $TiO_2$ films down to 3.25 eV. X-ray diffraction patterns were also given for the doped samples.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 265-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared active phonons and optical band gap in multiferroic GdMnO₃ studied by infrared and UV-visible spectroscopy
Autorzy:
Bukhari, S.
Ahmad, J.
Powiązania:
https://bibliotekanauki.pl/articles/1075504.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
78.20.-e
72.20.-i
73.20.Mf
Opis:
Optical properties of multiferroic GdMnO₃ synthesized by sol-gel method have been investigated by measuring the infrared reflectivity and UV-visible absorption spectra. The infrared reflectivity spectrum of polycrystalline GdMnO₃ in the frequency range 30-7500 cm^{-1} at room temperature contains several phonon modes. The resonant frequency of observed infrared active phonon modes is found comparable with theoretically predicted results. Mean Born effective charges are calculated and discussed in view of the origin of ferroelectricity in GdMnO₃. Three strong absorption peaks observed in the UV-visible spectrum are attributed to the Mn (3d)-electron transitions. The optical band gap ≈1.2 eV is estimated from UV-visible absorption spectrum using Tauc's relation. GdMnO₃ seems to behave like an indirect gap semiconductor.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 43-48
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects
Autorzy:
Keskenler, E.
Aydın, S.
Turgut, G.
Doğan, S.
Powiązania:
https://bibliotekanauki.pl/articles/1205375.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.66.Hf
78.40.Fy
78.66.Jg
68.37.Yz
68.55.ag
68.60.Bs
Opis:
Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin films were prepared on glass substrates by sol-gel spin coating technique using homogeneous precursor solutions, and effects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO films shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi films varied between 44.33 meV and 442.67 meV, and 58.3 × $10^{-2}$ and 5.8 × $10^{-2}$, respectively. The Urbach energies of the films increased with an increase in the Bi doping concentration and a great difference was observed for 7.0 mol.% doping. The band gap values of the films exhibited a fluctuated behavior as a result of doping effect.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 782-786
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Photoelectron Emission Yield from Layered Structures in Presence of Resonance-Enhanced X-Ray Propagation Effect
Autorzy:
Pełka, J. B.
Lagomarsino, S.
Cedola, A.
Di Fonzo, S.
Jark, W.
Powiązania:
https://bibliotekanauki.pl/articles/1963396.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.+g
78.20.-e
Opis:
In this work we present the new experimental results of total photoelectric yield as well as energy distribution of photoelectrons excited in a thin carbon film deposited on Ni mirror in the presence of resonance-enhanced X-ray propagation effect. The measurements were performed using conventional X-ray tube as a radiation source for the energy Cu K$\text{}_{α}$ (8047 keV). The spectra were recorded using a flow proportional electron counter with energy resolution of about 15%, and multichannel pulse height analyzer. A comparison with the reflectivity spectra recorded at the same time show an excellent correlation of both kinds of spectra, consistently with the theoretical prediction. A map of electron energy distribution is reported. Although the applied electron counter was of low energetic resolution the recorded spectra show characteristic regularities and indicate that the photoelectron yield excited in the presence of resonance-enhanced X-ray propagation effect can provide depth dependent information about impurity distribution and processes in thin layers.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 851-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Ellipsometry Problem for the Substrate-Based Uniaxial Non-Homogeneous Film
Autorzy:
Karpuk, M. M.
Karpuk, S. M.
Powiązania:
https://bibliotekanauki.pl/articles/2029257.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
44.30.+v
Opis:
An iterative procedure of calculation of reflectivities and transmission coefficients of light rays for an uniaxial film with a lapse rate of an index of refraction on a uniaxial substrate was gained by orienting the axis of anisotropy along the normal to the boundary. With its help the dependences of ellipsometric angles Δ and ψ for a linear, quadratic, and sine-shaped profiles of refractive indices of a uniaxial immersing film with optic axis oriented along the normal to the boundary were analyzed. The dependences of angles Δ andψ on quantity of an uptake and anisotropy of the film were also examined. The numerical modelling for ZnO films and Langmuir-Blodgett-like films on a melted quartz was carried out, and this allowed to draw conclusions of practical importance for the ellipsometric investigations of the film structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 6; 859-869
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Iljinas, A.
Burinskas, S.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503904.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
78.20.-e
Opis:
In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 60-62
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique
Autorzy:
Badran, R.
Al-Amodi, H.
Yaghmour, S.
Shaklan, S.
Bruggemann, R.
Han, X.
Xiong, S.
Powiązania:
https://bibliotekanauki.pl/articles/1419002.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.20.Ci
73.61.Jc
78.30.Ly
Opis:
The increase in power density of 0.3, 0.5, 0.6, and 0.7 W $cm^{-2}$ for hydrogenated amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H) thin film samples prepared by plasma enhanced chemical vapor deposition technique causes an increase in crystalline volume fraction when the silane concentration is fixed. This increase in crystalline volume fraction is correlated to the absorption coefficient and refractive index which are determined from ellipsometric measurements. The crystallinity of samples is studied by both Raman and X-ray diffraction techniques. A mild change in the optical energy gap around an average value of 1.8 eV is noticed due to the observed change in the degree of crystallinity of the samples when power density increases. Moreover, the ambipolar diffusion length measured by the steady-state photocarrier grating technique is found to change with the increase in power density. The values of some obtained optical parameters are compared to a standard crystalline sample.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 576-580
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals
Autorzy:
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1400493.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.-e
71.55.-i
Opis:
The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 128-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Seebeck Coefficient and Optical Studies of Cadmium Doped $CuInS_{2}$ Single Crystal
Autorzy:
Chaki, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807787.pdf
Data publikacji:
2009-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
72.20.Pa
78.20.-e
61.50.-f
Opis:
Single crystals of $CuInS_{2}$ were successfully grown by chemical vapor transport technique using iodine as transporting agent. The as-grown chemical vapor transport $CuInS_{2}$ single crystals were found to have large resistivity. To decrease the resistivity of the crystals they were doped with three different cadmium concentrations. Seebeck coefficient variation with temperature is measured for all the three doped samples. Optical bandgaps were determined for these three doped samples using optical absorption spectra. The obtained results are discussed in detail.
Źródło:
Acta Physica Polonica A; 2009, 116, 2; 221-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Temperature Raman Scattering in TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Line Shapes
Autorzy:
Gasanly, N. M.
Yuksek, N. S.
Powiązania:
https://bibliotekanauki.pl/articles/2044573.pdf
Data publikacji:
2005-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.30.Hv
78.30.-j
Opis:
The Raman spectra of TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ layered mixed crystals were studied for a wide range of composition (0≤x≤1) at T=50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.
Źródło:
Acta Physica Polonica A; 2005, 108, 6; 997-1003
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 38

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