Autor: Sochacki, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Król, K.
Kwietniewski, N.
Gierałtowska, S.
Wachnicki, Ł.
Sochacki, M.
Powiązania:: https://bibliotekanauki.pl/articles/1033217.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.16.Pr
77.84.Bw
77.55.dj
Opis:: The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 329-331
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Autorzy:: Król, K.
Konarski, P.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Powiązania:: https://bibliotekanauki.pl/articles/1376053.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.16.Pr
77.84.Bw
77.55.Dj
Opis:: This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1100-1103
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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