Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Sadowski, J" wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 19
Tytuł:
GaMnAs: Layers, Wires and Dots
Autorzy:
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811909.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
62.23.Hj
81.16.Hc
Opis:
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1001-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Vacancies in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As with Positron Annihilation Spectroscopy
Autorzy:
Tuomisto, F.
Slotte, J.
Saarinen, K.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036028.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
75.50.Pp
78.70.Bj
Opis:
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As$\text{}_{2}$ partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As$\text{}_{2}$ partial pressure.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 601-606
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferromagnetic, Ferrimagnetic and Spin-wave Resonances in GaMnAs Layers
Autorzy:
Fedorych, O.
Byszewski, M.
Wilamowski, Z.
Potemski, M.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035590.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
76.30.Fc
75.50.Pp
75.30.Gw
Opis:
Molecular beam epitaxy grown Ga$\text{}_{1-x}$Mn$\text{}_{x}$As layers were investigated by means of magnetic resonances. With an increase in Mn concentration, x, the spectrum changes from the (i) paramagnetic one, with resolved fine and hyperfine structures, typical of S=5/2 spin of substitutional Mn$\text{}^{2+}$ ions, for very diluted alloy, via (ii) paramagnetic spectrum, where the fine and hyperfine structures are averaged by a long range Mn$\text{}^{2+}$-Mn$\text{}^{2+}$ exchange coupling, (iii) single, isotropic line of ferromagnetic resonance. Insulator to metal transition is accompanied with occurrence of (iv) a very complex spectrum of the ferrimagnetic resonance, accompanied with the well-resolved spin wave resonance. Reentrance to insulator phase for the most condensed alloys is accompanied with the reentrance to (v) ferromagnetic phase. The data confirm that the effective mass holes transfer the exchange interaction between localized Mn$\text{}^{2+}$ spins.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 617-625
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:
Šustavičiūtė, R.
Balakauskas, S.
Adomavičius, R.
Krotkus, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047687.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Re
07.57.Hm
78.47.+p
75.50.Pp
Opis:
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 311-314
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Resonance Studies of the Origin of Ferromagnetism in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Potemski, M.
Byszewski, M.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036029.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
76.30.Fc
75.50.Pp
75.30.Gw
Opis:
Different types of magnetic resonance observed in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As reflect three different magnetic phases: para-, ferro-, and ferrimagnetic. Ferromagnet is characterized by single isotropic resonance line. A complex spectrum in ferrimagnet can be described by g factor equal to 1.44 and a sum of an axial and cubic anisotropy field. The axial field is by an order of magnitude greater than the cubic one. The complex structure of ferrimagnetic resonance is attributed to spin-wave resonance. Quantitative analysis of the dispersion of spin wave shows that the range of exchange coupling is very long, of the order of 25 nm, while spin-wave stiffness and the total exchange field are very small. The exchange field as evaluated from spin wave is by two orders of magnitude smaller than the Zener field corresponding to the critical temperature.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 607-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
Autorzy:
Levchenko, K.
Andrearczyk, T.
Domagala, J.
Wosinski, T.
Figielski, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1195381.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Gw
73.50.Jt
85.75.-d
Opis:
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1121-1124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Autorzy:
Andrearczyk, T.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791342.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
85.75.-d
Opis:
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 901-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Off-Axis Electron Holography of Magnetic Nanostructures: Magnetic Behavior of Mn Rich Nanoprecipitates in (Mn,Ga)As System
Autorzy:
Barańska, M.
Dłużewski, P.
Kret, S.
Morawiec, K.
Li, Tian
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033003.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.jp
68.37.Lp
07.05.Pj
75.50.Pp
Opis:
The Lorentz off-axis electron holography technique is applied to study the magnetic nature of Mn rich nanoprecipitates in (Mn,Ga)As system. The effectiveness of this technique is demonstrated in detection of the magnetic field even for small nanocrystals having an average size down to 20 nm.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1406-1408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
Autorzy:
Gutowski, M.
Stefanowicz, W.
Proselkov, O.
Sawicki, M.
Żuberek, R.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1428597.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.05.Kf
68.47.Fg
75.30.Gw
75.50.Pp
75.70.-i
75.70.Ak
75.70.Cn
75.70.Rf
76.50.+g
Opis:
In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from $[\overline{1}10]$ to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, $H_{eff}$ (=4π $M-H_{2⊥}$), $H_{2∥},$ and $H_{4∥}$. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1228-1230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field
Autorzy:
Hernandez, C.
Terki, F.
Charar, S.
Sadowski, J.
Maude, D.
Stanciu, V.
Svedlindh, P.
Powiązania:
https://bibliotekanauki.pl/articles/2036030.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.70.-i
Opis:
Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T$\text{}_{c}$≈40 K), a new phase transition is observed close to 13 K.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 613-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:
Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
Autorzy:
Juszyński, P.
Wasik, D.
Gryglas-Borysiewicz, M.
Przybytek, J.
Szczytko, J.
Twardowski, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403622.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.47.-m
Opis:
Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1004-1006
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices
Autorzy:
Sadowski, J.
Mathieu, R.
Svedlindh, P.
Kanski, J.
Karlsteen, M.
Świątek, K.
Domagała, J. Z.
Powiązania:
https://bibliotekanauki.pl/articles/2035614.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.75.+a
75.50.Pp
75.25.+z
Opis:
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12Å or 24Å). The non-magnetic InGaAs spacer layers are 12Å thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 687-694
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
Autorzy:
Andrearczyk, T.
Wosiński, T.
Figielski, T.
Mąkosa, A.
Tkaczyk, Z.
Łusakowska, E.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811912.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
Opis:
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies