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Wyświetlanie 1-9 z 9
Tytuł:
Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:
Šustavičiūtė, R.
Balakauskas, S.
Adomavičius, R.
Krotkus, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047687.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Re
07.57.Hm
78.47.+p
75.50.Pp
Opis:
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 311-314
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Autorzy:
Andrearczyk, T.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791342.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
85.75.-d
Opis:
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 901-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:
Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
Autorzy:
Juszyński, P.
Wasik, D.
Gryglas-Borysiewicz, M.
Przybytek, J.
Szczytko, J.
Twardowski, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403622.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.47.-m
Opis:
Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1004-1006
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Photoluminescence Study in PbS-EuS Superlattices
Autorzy:
Kowalczyk, L.
Sadowski, J.
Gałązka, R. R.
Stachow-Wójcik, A.
Sipatov, A. Yu.
Volobuev, V. V.
Smirnov, V. A.
Dugaev, V. K.
Powiązania:
https://bibliotekanauki.pl/articles/1991612.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
Opis:
Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF$\text{}_{2}$ substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 397-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
Autorzy:
Andrearczyk, T.
Wosiński, T.
Figielski, T.
Mąkosa, A.
Tkaczyk, Z.
Łusakowska, E.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811912.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
Opis:
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XANES Studies of Mn K and $L_{3,2}$ Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing
Autorzy:
Wolska, A.
Lawniczak-Jablonska, K.
Klepka, M.
Jakieła, R.
Demchenko, I.
Sadowski, J.
Holub-Krappe, E.
Persson, A.
Arvanitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/1812244.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
Opis:
$Ga_{1-x}Mn_xAs$ is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper $Ga_{1-x}Mn_xAs$ samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 357-366
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
Autorzy:
Yastrubchak, O.
Kulik, M.
Żuk, J.
Domagała, J.
Szymczak, R.
Wosiński, T.
Sadowski, J.
Tóth, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812027.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.30.Fs
Opis:
We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1445-1450
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-9 z 9

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