- Tytuł:
- Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
- Autorzy:
-
Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č. - Powiązania:
- https://bibliotekanauki.pl/articles/1505525.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp - Opis:
- The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł