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Wyświetlanie 1-15 z 42
Tytuł:
Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
Autorzy:
Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1156366.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.61.Ga
Opis:
Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Studies of CdTe/ZnTe Superlattices with Ultrathin ZnTe Layers
Autorzy:
Mariette, H.
Jouneau, P. H
Pelekanos, N. T.
Tardot, A.
Feuilet, G.
Magnea, N.
Powiązania:
https://bibliotekanauki.pl/articles/1929608.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.61.Ga
Opis:
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the study of special superlattice structure, corresponding to a monomolecular plane-host crystal system. Particular attention is given to the strain state control of the inserted ZnTe monolayer. High resolution electron microscopy is used to measure the local lattice distortion: the method yields the location and the total amount of Zn per period, and the results are compared with X-ray diffraction data. Optical properties of these superlattices are also presented. All results show the ability to control ultrathin pseudomorphic layers of ZnTc within CdTe, with limited Zn segregation, and of high crystalline and optical quality. In addition, they can be fitted within the framework of elasticity theory for the structural data, and of a finite quantum well model for the optical ones, even in the ultimate limit of only one nominal ZnTe monolayer.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 423-433
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Development of CdTe/Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling
Autorzy:
Reuscher, G.
Keim, M.
Fischer, F.
Waag, A.
Landwehr, G.
Powiązania:
https://bibliotekanauki.pl/articles/1933964.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
73.61.Ga
Opis:
We report the first observation of resonant tunneling through a CdTe/Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 885-888
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Study of MBE CdMnTe Doped with Bromine
Autorzy:
Szczytko, J.
Wasik, D.
Przybytek, J.
Baj, M.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934026.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
We present Hall effect and resistivity measurements as a function of pressure performed on MBE-grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (with x = 0.14) layer (1 μm) doped with bromine. The experimental data were analysed using positive and negative U model of the Br centres. We found that both models could reproduce the experimental points, but in the case of positive U model - only under assumption that the sample was completely uncompensated.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 933-936
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Injection of Optically Generated Spins through Magnetic Nonmagnetic Heterointerface: Ruling out Possible Detection Artifacts
Autorzy:
Ghali, M.
Kossut, J.
Janik, E.
Powiązania:
https://bibliotekanauki.pl/articles/2038227.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
73.61.Ga
Opis:
We report on injection of optically created spin-polarized carriers into CdTe-based materials. The injected spins are initially aligned in a diluted magnetic semiconductor CdMnTe layer located on the top of CdMgTe layer in CdMnTe/CdMgTe spintronic generic model structures. A critical discussion of possible artifacts that may complicate the spin detection and its quantitative analysis is given. Although the spin injection efficiency, 80%, has been found by us to be basically independent of the thickness of the spin detecting layer, there is an essential difference between thin and wide detectors related to the strain-induced lifting of the valence band degeneracy in the former, when assessing the efficiency of the spin injection. Most importantly, we observe an effect of switching the spin injection process on and off by an external magnetic field variation within a relatively narrow field range. This effect can be achieved by a careful design of the interface between the diluted magnetic semiconductor and the non-magnetic semiconductor.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 207-214
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron DX State in CdTe:In
Autorzy:
Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
Autorzy:
Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934051.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption of Thin ZnSe, ZnS and ZnS$\text{}_{x}$Se$\text{}_{1-x}$ Films under High Hydrostatic Pressure
Autorzy:
Griebl, E.
Schőtz, G.
Birzer, Ch.
Kerner, W.
Reisinger, T.
Hahn, B.
Gebhardt, W.
Powiązania:
https://bibliotekanauki.pl/articles/1934060.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
71.35.+z
Opis:
We present absorption measurements on free-standing ZnSe, ZnS and ZnS$\text{}_{x}$Se$\text{}_{1-x}$ films (d = 0.4...2 μm) under hydrostatic pressure up to 15 GPa. The refraction index n(λ,P) of ZnS and ZnSe in the transparent region up to 800 nm and the pressure shift of the E0 absorption edge of ZnSe and some ZnS$\text{}_{x}$Se$\text{}_{1-x}$-compositions was investigated at 293 K. At 2 K free exciton states near the E$\text{}_{0-}$ and E$\text{}_{0}$ + Δ$\text{}_{0}$-gap are visible in absorption. Increase in the Rydberg energy under pressure was found, which is explained with k • p-theory in the framework of the hydrogen model.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 995-999
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:
Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
Autorzy:
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Karczewski, G.
Wojtowicz, T.
Contreras, S.
Callen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1968369.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
73.61.Ga
Opis:
An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 911-914
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Analysis of Optical Losses in CdS/CdTe Solar Cells
Autorzy:
Roshko, V.
Kosyachenko, L.
Grushko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492967.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.Jt
85.60.Dw
73.61.Ga
Opis:
Based on the known refractive index and extinction coefficient, calculations of optical losses in glass/transparent conducting oxide/CdS/CdTe solar cells have been carried out taking into account reflections at the interfaces and absorption in the transparent conducting oxide (indium tin oxide or $SnO_2$:F) and CdS layers. It has been shown that the losses caused by reflections at the interfaces result in lowering the short-circuit current by ≈ 9% whereas absorption in the transparent conducting oxide and CdS layers with the typical thicknesses lead to losses of 15-16% for glass/$SnO_2$/CdS/CdTe, and 22-24% for glass/indium tin oxide/CdS/CdTe solar cells.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 954-956
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Dependent Conductivity of Ultrathin ZnO Films
Autorzy:
Snigurenko, D.
Kopalko, K.
Krajewski, T.
Łuka, G.
Gierałtowska, S.
Witkowski, B.
Godlewski, M.
Dybko, K.
Paszkowicz, W.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1403646.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
81.15.Gh
Opis:
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1042-1044
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Limitations on Thickness of Absorber Layer in CdS/CdTe Solar Cells
Autorzy:
Mykytyuk, T.
Roshko, V.
Kosyachenko, L.
Grushko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1409388.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.Jt
85.60.Dw
73.61.Ga
Opis:
Calculations of the integrated absorptive capacity of CdTe layer taking into account the spectrum of the AM1.5 solar radiation and the absorption coefficient of CdTe are carried out. The recombination losses at the front and rear surfaces of the CdTe layer and in the space-charge region are also calculated based on the continuity equation. The restrictions on the thickness of CdTe in CdS/CdTe heterojunction have been ascertained taking into account all types of losses. It is shown that in CdTe, the almost complete absorption of photons (99.9%) in the hν > $E_{g}$ range is observed at a layer thickness of more than 20-30 μm, and the absorptive capacity of photons in a CdTe layer of thickness 1 μm is about 93%. The obtained results indicate that when the CdTe absorber layer is very thin, it is impossible to avoid a noticeable decrease of the short circuit current density $J_{sc}$ as compared with a typical thickness of the absorber layer. The loss in $J_{sc}$ is 19-20% when the thickness is 0.5 μm compared to 5% for a thickness of 2-3 μm.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1073-1076
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels Induced by CdTe/ZnTe Quantum Dots
Autorzy:
Zielony, E.
Placzek-Popko, E.
Roznicka, A.
Gumienny, Z.
Szatkowski, J.
Dyba, P.
Pacuski, W.
Kruse, C.
Hommel, D.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048061.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 630-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Defect Structure of $Hg_{1-x}Cd_{x}Te$ Films by Ion Milling
Autorzy:
Pociask, M.
Izhnin, I.
Ilyina, E.
Dvoretsky, S.
Mikhailov, N.
Sidorov, Yu.
Varavin, V.
Mynbaev, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811974.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
61.80.Jh
66.30.Lw
Opis:
A study of the defect structure of heteroepitaxially grown $Hg_{1-x}Cd_{x}Te$ (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ $10^{17} cm^{-3}$, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of $10^{15} cm^{-3}$, which is typical of high-quality MCT.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1293-1301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 42

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