Autor: Zakrzewski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
Autorzy:: Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1934051.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
73.61.Ga
Opis:: N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Two-Electron DX State in CdTe:In
Autorzy:: Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:: https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Gs
73.61.Ga
Opis:: In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:: Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:: https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
73.61.Ga
Opis:: We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:: Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:: The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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